Micrometer-size GaN Schottky-diodes for mm-wave frequency multipliers

COJOCARI, O.; POPA, V.; URSAKI, V. V.; TIGINYANU, I. M.; MUTAMBA, K.; SAGLAM, M.; HARTNAGEL, H. L.

Micrometer-size GaN Schottky-diodes for mm-wave frequency multipliers

COJOCARI, O.; POPA, V.; URSAKI, V. V.; TIGINYANU, I. M.; MUTAMBA, K.; SAGLAM, M.; HARTNAGEL, H. L.

URI: https://doi.org/10.1109/ICIMW.2004.1422084
http://repository.utm.md/handle/5014/10907

Date: 2004

Abstract:

Small-size Pt/n-GaN Schottky diodes are fabricated using electrochemical technique for anode metallisation. Effects of surface passivation and thermal annealing on the interface quality are studied using PL-measurements and electrical characterisation. DC-characteristics of 5 /spl mu/m-diameter anodes result in a cut-off frequency of 390 GHz. The perspectives of GaN-diodes for THz-frequency multipliers are discussed.