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Browsing Articole din publicaţii internaţionale by Title

Browsing Articole din publicaţii internaţionale by Title

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  • Photoconductive properties of HgGa2S4 
    RICCI, P. C.; ANEDDA, A.; CORPINO, R.; TIGINYANU, I. M.; URSAKI, V. V. (ELSEVIER, 2003)
    Mercury thiogallate, HgGa2S4 is a defect chalcopyrite semiconductor with the space group S42 which offers a combination of attractive properties for applications. In order to obtain information about the electron states ...
  • Photoconductivity and optical absorption of dimorphite thin films 
    TSIULYANU, D.; GOLBAN, G.; KOLOMEYKO, E.; MELNIC, O. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 1996)
    Optical absorption and photoconductivity of As4S3 thin films have been studied. The absorption coefficient is shown to be influenced by the technology of film preparation, in particular by growth velocity and substrate ...
  • Photodetectors and birefringence in ZnP2–С2h5 crystals 
    STAMOV, I. G.; SYRBU, N. N.; DOROGAN, A. V. (Elservier, 2013)
    The spectral dependences of refractive indexes no(n⊥), ne(n||) and Δn=no(n⊥)−ne(n||) were studied in ZnP2–C2h5 crystals. The intersection of no(n⊥) and ne(n||) was found for λ0=0.906μm. The crystal possesses positive ...
  • Photoelectric and electrical properties of heterojunctions on cadmium tetraphosphide with zinc oxide 
    STAMOV, I. G.; TKACHENKO, D. V.; SYRBU, N.N. (Institutul de Fizică Aplicată, AŞM, 2018)
    Active structures on anisotropic crystals with large birefringence and semiconductor properties make it possible to solve a number of problems of polarization optoelectronics and simultaneously to study the properties of ...
  • Photoelectric Phenomena in Isotope Vitreous As2S3-Silicon Single-Crystal Heterojunctions 
    TSIULYANU, D. I.; KOLOMEYKO, E. P.; STAMOV, V. N. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 1987)
    In the present note the photoelectrical phenomena in isotype heterojunctions on te basis of single-crystal p-Si and vitreous As2S3 with aluminium or chromium electrodes, were investigated. The electrical properties and the ...
  • Photoelectric structures based on nanoporous p-InP 
    DIKUSAR, A. I.; BRUK, L. I.; MONAICO, E. V.; SHERBAN, D. A.; SIMASHKEVICH, A. V.; TIGINYANU, I. M. (Springer Nature Switzerland, 2008)
    The possibility of nanostructuring of surfaces of indium phosphide with hole conduction is confirmed. The technique of manufacturing and research of SnO2/InP heterostructures with a nanoporous surface at the interface is ...
  • Photoelectrical properties and the stability at radiation for monocrystals ZNIN2S4 
    ARAMA, Efim; GHEORGHITA, Eugeniu; PINTEA, Valentina; MACIUGA, Anatol (Academia de Studii Economice din Moldova, 2015)
    This study presents the results of investigations on the conductivity and irradiation stability of single crystals 2 4 ZnIn S14 in a wide range of incident electron energies ( 30÷75 keV) and the respective doses (10 14÷10 ...
  • Photoelectrical properties of a Au-CdIn2S4 surface-barrier diode 
    RADAUTSAN, S. I.; MOLODYAN, I. P.; BULYARSKII, S. V.; SYRBU, N. N.; TEZLEVAN, V. E. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 1974)
    The photoelectrical properties of Schottky barriers Au-CdIn2S4 in a broad energy region have been considered. The optical direct and indirect transitions and the spin-orbit splittings of zones Γ15(Γ7), Γ15(Γ8) in L1(L6) ...
  • Photoelectrical properties of isotype heterostructure with Schottky barrier Pd-p-InP/p-InGaAs/p-InP 
    RUSU, E. V.; SLOBODCHIKOV, S. V.; SALIKHOV, H. M.; TURCU, M. (IEEE, 1998)
    The electrical and photoelectrical characteristics of the isotype p-InP/p-InGaAs heterostructure with the Pd-p-InP Schottky barrier as well as the impact of 500 ppm H/sub 2/ atmosphere on these characteristics have been ...
  • Photoinduced effects and light emission in Ga-La-S:Pr/sup 3+/ glass 
    SEDDON, A .B.; FURNISS, D.; JOVU, M. S.; SHUTOV, S. D.; SYRBU, N. N.; ANDRIESH, A. M.; HERTOGEN, P.; ADRIAENSSENS, G. J. (IEEE, 2003)
    The absorption and radiation spectra of Ga-La-S-O glasses with fixed cation ratio Ga/La=0.7/0.3 and two oxygen content 0.65 Wt % and 2.95 Wt % were studied for two Pr/sup 3+/ doping levels of 0.1 and 1.0 Wt %. Presence of ...
  • Photoinduced modification of surface states in nanoporous InP 
    LLOYD-HUGHES, J.; MÜLLER, S.; SCALARI, G.; BISHOP, H.; CROSSLEY, A.; ENACHI, M.; SIRBU, L.; TIGINYANU, I. M. (American Institute of Physics, 2012)
    Porous honeycombs of n-type InP were investigated by terahertz time-domain and x-ray photoemission spectroscopies. After photoexcitation the dark conductivity was found to increase quasi-irreversibly, recovering only after ...
  • Photoinduced modification of surface states in nanoporous InP observed by terahertz spectroscopy 
    LLOYD-HUGHES, James; MUELLER, Susanne; SCALARI, Giacomo; BISHOP, Hugh; CROSSLEY, Alison; ENACHI, Mihai; SIRBU, Lilian; TIGINYANU, Ion (American Physical Society, 2012)
    A precise control of the surface properties of semiconductor nanomaterials is vital for their functionality and use in many opto-electronic applications. Terahertz time-domain spectroscopy allows the non-contact investigation ...
  • Photoluminescence and conductivity compensation effects in fast-electron irradiated InP epilayers 
    RADAUTSAN, S. I.; TIGINYANU, I. M.; PYSHNAYA, N. B.; URSAKI, V. V. (Springer Nature Switzerland, 1994)
    Strong interaction between residual donor impurities and radiation defects was evidenced by studying the photoluminescence spectra of bound excitons in fast-electron (E=4 MeV) irradiated n-InP epilayers. A diminution of ...
  • Photoluminescence and Raman scattering in In0.53Ga0.47As/InP:Dy 
    PODOR, Balint; VIGNAUD, D.; TIGINYANU, I. M.; CSONTOS, L.; URSAKI, V. V.; SHONTYA, V. P. (Society of Photo-Optical Instrumentation Engineers, SPIE, 1997)
    High purity In0.53Ga0.47As grown on InP by liquid phase epitaxy with small amounts of rare earth dysprosium (Dy) in the melt was investigated. The presence of Dy dramatically reduced the charge carrier and residual donor ...
  • Photoluminescence and Raman Study of Well-Aligned ZnO Nanorods on p-Si Substrate 
    URSAKI, V. V.; LUPAN, O.; TIGINYANU, I. M.; CHAI, G.; CHOW, L. (American Scientific Publishers, 2011)
    We report on optical properties of ZnO nanorods grown on p-type Si substrates by an electric-field assisted assembly technique in aqueous solutions applied at relative low temperature (96°C). The results of micro-Raman ...
  • Photoluminescence and resonant Raman scattering from ZnO-opal structures 
    URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; MASALOV, V. M.; SAMAROV, E. N.; EMELCHENKO, G. A.; BRIONES, F. (American Institute of Physics, 2004)
    We study photoluminescence (PL) of ZnO-opal structures excited by a 351.1 nm laser line. The structures were fabricated by infiltration of ZnO from an aqueous solution of zinc nitrate into opal matrices. The emission ...
  • Photoluminescence and resonant Raman scattering in highly conductive ZnO layers 
    ZALAMAI, V. V.; URSAKI, V. V.; RUSU, E. V.; ARABADJI, P.; TIGINYANU, I. M.; SIRBU, L. (American Institute of Physics, 2004)
    Photoluminescence (PL) and resonant Raman scattering (RRS) excited by the 351.1nm line of an Ar+ laser were studied in highly conductive ZnO layers deposited by thermal decomposition of Zn(C5H7O2)2 metalorganic compound ...
  • Photoluminescence and vibrational properties of nanostructured ZnSe templates 
    MONAICO, E.; TIGINYANU, I. M.; URSAKI, V. V.; SARUA, A.; KUBALL, M.; NEDEOGLO, D. D.; SIRKELI, V. P. (IOP Publishing, 2007)
    Electrochemical etching of pores in as-grown and doped n-type ZnSe substrates is reported. To dope the samples the as-grown semi-insulating substrates were annealed in a Zn melt containing Al impurity at concentrations ...
  • Photoluminescence mechanisms of Tb3+ - doped porous GaP 
    ELHOUICHET, H.; OUESLATI, M.; LORRAIN, N.; LANGA, S.; TIGINYANU, I. M.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2005)
    Porous GaP (por-GaP) samples are doped with terbium ions (Tb3+) by simple impregnation followed by high-temperature annealing. From scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) analysis, we show ...
  • Photoluminescence of Ce and Pr codoped calcium thiogallate 
    ANEDDA, A.; CARBONARO, C. M.; CHIRIU, D.; CORPINO, R.; MARCEDDU, M.; RICCI, P. C.; GEORGOBIANI, A. N.; TAGIEV, B. G.; TAGIEV, O. B.; ABUSHEV, S. A.; TIGINYANU, I. M. (John Wiley & Sons, Inc., 2006)
    We investigated the room temperature photoluminescence of calcium thiogallate codoped with Ce and Pr. Line shaped emissions superimposed over a wide and composed luminescence band were observed. Different components were ...

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