IRTUM – Institutional Repository of the Technical University of Moldova

Browsing Articole din publicaţii internaţionale by Title

Browsing Articole din publicaţii internaţionale by Title

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  • LLOYD-HUGHES, J.; MÜLLER, S.; SCALARI, G.; BISHOP, H.; CROSSLEY, A.; ENACHI, M.; SIRBU, L.; TIGINYANU, I. M. (American Institute of Physics, 2012)
    Porous honeycombs of n-type InP were investigated by terahertz time-domain and x-ray photoemission spectroscopies. After photoexcitation the dark conductivity was found to increase quasi-irreversibly, recovering only after ...
  • LLOYD-HUGHES, James; MUELLER, Susanne; SCALARI, Giacomo; BISHOP, Hugh; CROSSLEY, Alison; ENACHI, Mihai; SIRBU, Lilian; TIGINYANU, Ion (American Physical Society, 2012)
    A precise control of the surface properties of semiconductor nanomaterials is vital for their functionality and use in many opto-electronic applications. Terahertz time-domain spectroscopy allows the non-contact investigation ...
  • RADAUTSAN, S. I.; TIGINYANU, I. M.; PYSHNAYA, N. B.; URSAKI, V. V. (Springer Nature Switzerland, 1994)
    Strong interaction between residual donor impurities and radiation defects was evidenced by studying the photoluminescence spectra of bound excitons in fast-electron (E=4 MeV) irradiated n-InP epilayers. A diminution of ...
  • PODOR, Balint; VIGNAUD, D.; TIGINYANU, I. M.; CSONTOS, L.; URSAKI, V. V.; SHONTYA, V. P. (Society of Photo-Optical Instrumentation Engineers, SPIE, 1997)
    High purity In0.53Ga0.47As grown on InP by liquid phase epitaxy with small amounts of rare earth dysprosium (Dy) in the melt was investigated. The presence of Dy dramatically reduced the charge carrier and residual donor ...
  • URSAKI, V. V.; LUPAN, O.; TIGINYANU, I. M.; CHAI, G.; CHOW, L. (American Scientific Publishers, 2011)
    We report on optical properties of ZnO nanorods grown on p-type Si substrates by an electric-field assisted assembly technique in aqueous solutions applied at relative low temperature (96°C). The results of micro-Raman ...
  • URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; MASALOV, V. M.; SAMAROV, E. N.; EMELCHENKO, G. A.; BRIONES, F. (American Institute of Physics, 2004)
    We study photoluminescence (PL) of ZnO-opal structures excited by a 351.1 nm laser line. The structures were fabricated by infiltration of ZnO from an aqueous solution of zinc nitrate into opal matrices. The emission ...
  • ZALAMAI, V. V.; URSAKI, V. V.; RUSU, E. V.; ARABADJI, P.; TIGINYANU, I. M.; SIRBU, L. (American Institute of Physics, 2004)
    Photoluminescence (PL) and resonant Raman scattering (RRS) excited by the 351.1nm line of an Ar+ laser were studied in highly conductive ZnO layers deposited by thermal decomposition of Zn(C5H7O2)2 metalorganic compound ...
  • MONAICO, E.; TIGINYANU, I. M.; URSAKI, V. V.; SARUA, A.; KUBALL, M.; NEDEOGLO, D. D.; SIRKELI, V. P. (IOP Publishing, 2007)
    Electrochemical etching of pores in as-grown and doped n-type ZnSe substrates is reported. To dope the samples the as-grown semi-insulating substrates were annealed in a Zn melt containing Al impurity at concentrations ...
  • ELHOUICHET, H.; OUESLATI, M.; LORRAIN, N.; LANGA, S.; TIGINYANU, I. M.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2005)
    Porous GaP (por-GaP) samples are doped with terbium ions (Tb3+) by simple impregnation followed by high-temperature annealing. From scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) analysis, we show ...
  • ANEDDA, A.; CARBONARO, C. M.; CHIRIU, D.; CORPINO, R.; MARCEDDU, M.; RICCI, P. C.; GEORGOBIANI, A. N.; TAGIEV, B. G.; TAGIEV, O. B.; ABUSHEV, S. A.; TIGINYANU, I. M. (John Wiley & Sons, Inc., 2006)
    We investigated the room temperature photoluminescence of calcium thiogallate codoped with Ce and Pr. Line shaped emissions superimposed over a wide and composed luminescence band were observed. Different components were ...
  • SHISHIYANU, S. T.; LUPAN, O. I.; MONAICO, E. V.; URSAKI, V. V.; SHISHIYANU, T. S.; TIGINYANU, I. M. (ELSEVIER, 2005)
    Aluminum-doped zinc oxide (ZnO:Al) films fabricated by chemical bath deposition are characterized using scanning electron microscopy and photoluminescence (PL) spectroscopy. The impact of rapid thermal annealing (RTA) upon ...
  • URSAKI, Veaceslav V.; RUSU, Emil; ZALAMAI, Victor; SIRBU, Lilian; MONAICO, Eduard; TIGINYANU, Ion M. (Society of Photo-Optical Instrumentation Engineers, SPIE, 2004)
    ZnO-based red phosphors were prepared by different methods. One phosphor was grown from a Na2B4O7 melt, and another one was prepared from a ZnO:Eu2O3 powder via electron beam treatment. The e-beam processing is found to ...
  • URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; MASALOV, V. M.; SAMAROV, E. N.; EMELCHENKO, G. A.; BRIONES, F. (IOP Publishing, 2004)
    The emission from ZnO layers grown on the surface of bulk opals using chemical deposition is studied under excitation by the 351.1 nm line of an Ar+ laser at different excitation power densities and temperatures. The ...
  • VERLAN, V. I.; IOVU, M. S.; CULEAC, I.; NISTOR, Y.; TURTA, C. I.; ZUBAREVA, V. E. (Elsevier, 2011)
    Thin films (1–10μm thickness) of nanocomposites (NC) based on organic coordinated compound (OCC) Eu(TTA)2(Phen3PO)2NO3 (where TTA is thenoyltrifluoroacetonate (C8H5F3O2S), Phen – 1,10-phenanthroline (C12H8N2)) and polymer ...
  • URSAKI, V.; BOLDURESCU, V.; BURLAKOV, I.; SYRBU, N.; NYARI, T. (IEEE, 2000)
    Photoluminescence (PL) spectra of ZnAl/sub 2/S/sub 4/ crystals with spinel structure were studied under the extrinsic excitation. The PL bands at 0.98 eV and 1.34 eV are suggested to be caused by native defects; while the ...
  • GHIMPU, L.; URSAKI, V. V.; POTLOG, T.; TIGINYANU, I. M. (IOP Publishing, 2005)
    Three photoluminescence (PL) bands centred at 1.30, 1.35 and 1.45 eV have been observed in the PL spectrum of CdTe/CdS thin film solar cells grown by close space sublimation (CSS) techniques from a source with Cu residual ...
  • IVANOVA, Galina N.; NEDEOGLO, Dmitrii D.; NEDEOGLO, Natalia D.; RUSU, Emil V.; SIRKELI, Vadim P.; STRATAN, Gheorghe I.; URSAKI, Veacheslav V. (AIP Publishing LLC, 2007)
    Photoluminescence of N-doped ZnSe crystals is studied at temperatures between 10 and 300 K. Doping with N leads to the formation of simple N-based donor and acceptor defects, as well as associative N-based acceptors. The ...
  • IOVU, M.; ENACHESCU, M.; CULEAC, I.; VERLAN, V.; ROBU, S.; BOJIN, D.; NISTOR, Iu.; COJOCARU, I. (SPIE, 2015)
    We present experimental results on copolymer-based nanocomposite made of styrene with butyl methacrylate (SBMA) (1:1) and inorganic semiconductor CdS. Thin film composite samples have been characterized by UV-Vis absorption ...
  • ANDRIESH, A. M.; IOVU, M. S.; CULEAC, I. P.; NISTOR, Iu. H.; ROBU, Şt.; DRAGALINA, G.; POPUŞOI, A.; MITCOV, D.; ENACHE, M.; PETRENKO, P. (Institutul de Fizică Aplicată al AŞM, 2012)
    We present here experimental results on polymer-inorganic nanocomposite material made of styrene with butyl methacrylate (SBMA) with isothiocyanato-chalcone (ITCC) and inorganic semiconductor CdS. Styrene with butyl ...
  • BORDIAN, O.; VERLAN, V.; CULEAC, I.; IOVU, M.; ZUBAREVA, V. (National Institute of Optoelectronics, Romania, 2017)
    We report preparation and characterization of new nanocomposite material based on oligomers poly-N-propyl carbazole (PEPC) and the organic compound Eu(o-MBA)3Phen, where o-MBA – ortho-methylbenzoic acid, Phen – phenanthroline. ...

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