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Browsing Articole din publicaţii internaţionale by Author "HARTNAGEL, H. L."

Browsing Articole din publicaţii internaţionale by Author "HARTNAGEL, H. L."

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  • Raman and electrical characterization of n-InP implanted by 630-keV nitrogen 
    TIGINYANU, I. M.; MIAO, J.; HARTNAGEL, H. L.; RUCK, D.; TINSCHERT, K.; URSAKI, V. V.; ICHIZLI, V. M. (IEEE, 1996)
    The goal of this work was to study the peculiarities of lattice disorder and conductivity compensation caused by N-implantation in liquid encapsulated Czochralski grown n-InP single crystals. The ion-induced damage of the ...
  • Raman and IR-Reflectance Spectra of Porous III–V Semiconductor Structures 
    SARUA, A.; GÄRTNER, G.; IRMER, G.; MONECKE, J.; TIGINYANU, I. M.; HARTNAGEL, H. L. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2000)
    Porous layers on the basis of LEC-grown n-type crystals of (111)-GaP and (100)-InP were fabricated by electrochemical etching in aqueous acidic solutions. The prepared samples were studied by micro-Raman analysis and by ...
  • Raman Modes in Porous GaP under Hydrostatic Pressure 
    TIGINYANU, I. M.; URSAKI, V. V.; RAPTIS, Y. S.; STERGIOU, V.; ANASTASSAKIS, E.; HARTNAGEL, H. L.; VOGT, A.; PRÉVOT, B.; SCHWAB, C. (John Wiley & Sons, Inc., 1999)
    Bulk and free-standing porous membranes of GaP have been characterised by Raman spectroscopy under hydrostatic pressure, with emphasis to the Fröhlich surface vibration mode. Under compression, an increase in the frequency ...
  • Raman spectroscopy of porous and bulk GaP subjected to MeV-ion implantation and annealing 
    SARUA, A.; IRMER, G.; MONECKE, J.; TIGINYANU, I. M.; SCHWAB, C.; GROB, J.-J.; HARTNAGEL, H. L. (American Institute of Physics, 2000)
    Porous layers on (100)-oriented n-type liquid encapsulated Czochralski grown GaP crystals were fabricated by electrochemical etching in a H2SO4 aqueous solution and analyzed by scanning electron microscopy. 12C+ ions were ...
  • Technology of Wide-Bandgap Diode Structures for Highfrequency Operation 
    MUTAMBA, K.; YILMAZOGLU, O.; COJOCARI, O.; SYDLO, C.; PAVLIDIS, D.; HARTNAGEL, H. L. (IEEE, 2006)
    This paper reports on technology development aspects for GaN-based diodes in view of their application at high frequencies. The investigated devices include structures for transferred electron effects for operation at high ...
  • Zn/sup +/, Zn/sup +//P/sup +/ and Zn/sup +//As/sup +/ implanted InP: study of electrical and symmetry properties 
    TIGINYANU, I. M.; KRAVETSKY, I. V.; URSAKI, V. V.; MAROWSKY, G.; HARTNAGEL, H. L. (IEEE, 1997)
    InP is known to be characterized by a low activation efficiency of p-type dopants. Some attempts have been previously undertaken to use the coimplantation of P/sup +/ ions in order to improve the activation efficiency of ...

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