IRTUM – Institutional Repository of the Technical University of Moldova

Browsing Articole ştiinţifice by Subject "macropores"

Browsing Articole ştiinţifice by Subject "macropores"

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  • Electrochemical pore etching in Ge 
    LANGA, S.; CHRISTOPHERSEN, M.; CARSTENSEN, J.; TIGINYANU, I. M.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    Nucleation and growth of electrochemically obtained pores on (111) and (100) oriented n-Ge in different electrolytes was investigated. On rough surfaces pore density increases as the current density increases, whereas on ...
  • Fast pore etching 
    FREY, S.; KEMELL, M.; CARSTENSEN, J.; LANGA, S.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2005)
    The growth of silicon macropores under high current densities and high HF concentrations is studied. A new growth mode for porous Si has been found where pores resemble the so-called current line oriented pores previously ...
  • Formation of metal wire arrays via electrodeposition in pores of Si, Ge and III–V semiconductors 
    FANG, C.; FOCA, E.; SIRBU, L.; CARSTENSEN, J.; FÖLL, H.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2007)
    Deep straight macropores in n-type Si have been completely filled with copper (Cu). Homogeneous metal deposition inside the deep pores was achieved by means of electroplating using a solution containing only CuSO4 mixed ...
  • Impedance Spectroscopy as a Powerful Tool for Better Understanding and Controlling the Pore Growth Mechanism in Semiconductors 
    COJOCARU, A.; FOCA, E.; CARSTENSEN, J.; LEISNER, M.; TIGINYANU, I. M.; FÖLL, H. (Springer, Berlin, Heidelberg, 2009)
    This work shows new results towards a better understanding of macropore growth in semiconductor phenomenology by using in-situ FFT impedance spectroscopy. A new interpretation of the voltage impedance is proposed. In ...
  • Nucleation and growth of macro pores on (100) n-type Ge 
    LANGA, S.; CARSTENSEN, J.; TIGINYANU, I. M.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2005)
    The authors investigate the nucleation and growth of macro pores on n-type Ge in the dark and with back side illumination. We show that nucleation on Ge is strongly dependent on the surface defect structure and therefore ...
  • Self-induced oscillation of the macropore diameter in n-type silicon 
    COJOCARU, Ala; CARSTENSEN, Jürgen; LEISNER, Malte; FÖLL, Helmut; TIGINYANU, Ion (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2009)
    Electrochemical etching of n-type silicon in viscous-electrolyte containing HF for macropore formation has been employed to obtain deep pores at high growth rates. Under certain conditions, a new kind of macropore growth ...

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