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Browsing Articole ştiinţifice by Author "ERRANDONEA, D."

Browsing Articole ştiinţifice by Author "ERRANDONEA, D."

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  • Crystal Chemistry of CdIn2S4, MgIn2S4, and MnIn2S4 Thiospinels under High Pressure 
    SANTAMARÍA-PÉREZ, D.; AMBOAGE, M.; MANJÓN, F. J.; ERRANDONEA, D.; MUÑOZ, A.; RODRÍGUEZ-HERNÁNDEZ, P.; MÚJICA, A.; RADESCU, S.; URSAKI, V. V.; TIGINYANU, I. M. (American Chemical Society, 2012)
    We report X-ray diffraction measurements in CdIn2S4, MgIn2S4, and MnIn2S4 thiospinels at room temperature and high pressures. The pressure dependences of the structural parameters have been determined and compared to those ...
  • HgGa2Se4 under high pressure: An optical absorption study 
    GOMIS, O.; VILAPLANA, R.; MANJÓN, F. J.; RUIZ-FUERTES, J.; PÉREZ-GONZÁLEZ, E.; LÓPEZ-SOLANO, J.; BANDIELLO, E.; ERRANDONEA, D.; SEGURA, A.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; URSAKI, V. V.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2015)
    High-pressure optical absorption measurements have been performed in defect chalcopyrite HgGa2Se4 to investigate the influence of pressure on the bandgap energy and its relation with the pressure-induced order–disorder ...
  • High-pressure effects on the optical-absorption edge of CdIn2S4, MgIn2S4, and MnIn2S4 thiospinels 
    RUIZ-FUERTES, J.; ERRANDONEA, D.; MANJÓN, F. J.; MARTÍNEZ-GARCÍA, D.; SEGURA, A.; URSAKI, V. V.; TIGINYANU, I. M. (American Institute of Physics, 2008)
    The effect of pressure on the optical-absorption edge of CdIn2S4, MgIn2S4, and MnIn2S4 thiospinels at room temperature is investigated up to 20 GPa. The pressure dependence of their band-gaps has been analyzed using the ...
  • High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds 
    GOMIS, O.; VILAPLANA, R.; MANJÓN, F. J.; PÉREZ-GONZÁLEZ, E.; LÓPEZ-SOLANO, J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ERRANDONEA, D.; RUIZ-FUERTES, J.; SEGURA, A.; SANTAMARÍA-PÉREZ, D.; TIGINYANU, I. M.; URSAKI, V. V. (American Institute of Physics, 2012)
    High-pressure optical absorption and Raman scattering measurements have been performed in defect chalcopyrite (DC) CdGa2Se4 up to 22 GPa during two pressure cycles to investigate the pressure-induced order-disorder phase ...
  • High-pressure study of the structural and elastic properties of defect-chalcopyrite HgGa2Se4 
    GOMIS, O.; VILAPLANA, R.; MANJÓN, F. J.; SANTAMARÍA-PÉREZ, D.; ERRANDONEA, D.; PÉREZ-GONZÁLEZ, E.; LÓPEZ-SOLANO, J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; TIGINYANU, I. M.; URSAKI, V. V. (American Institute of Physics, 2013)
    In this work, we focus on the study of the structural and elastic properties of mercury digallium selenide (HgGa2Se4) which belongs to the family of AB2X4 ordered-vacancy compounds with tetragonal defect chalcopyrite ...
  • High-pressure x-ray diffraction study on the structure and phase transitions of the defect-stannite ZnGa2Se4 and defect-chalcopyrite CdGa2S4 
    ERRANDONEA, D.; KUMAR, Ravhi S.; MANJÓN, F. J.; URSAKI, V. V.; TIGINYANU, I. M. (American Institute of Physics, 2008)
    X-ray diffraction measurements on the sphalerite-derivatives ZnGa2Se4ZnGa2Se4 and CdGa2S4CdGa2S4 have been performed upon compression up to 23 GPa in a diamond-anvil cell. ZnGa2Se4ZnGa2Se4 exhibits a defect tetragonal ...
  • Lattice dynamics of ZnAl2O4 and ZnGa2O4 under high pressure 
    LÓPEZ-MORENO, S.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ROMERO, A. H.; MANJÓN, F. J.; ERRANDONEA, D.; RUSU, E.; URSAKI, V. V. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2011)
    In this work we present a first-principles density functional study of the vibrational properties of ZnAl2O4 and ZnGa2O4 as function of hydrostatic pressure. Based on our previous structural characterization of these two ...
  • Lattice dynamics study of HgGa2Se4 at high pressures 
    VILAPLANA, R.; GOMIS, O.; MANJÓN, F. J.; ORTIZ, H.; PÉREZ-GONZÁLEZ, E.; LÓPEZ-SOLANO, J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ERRANDONEA, D.; URSAKI, V. V.; TIGINYANU, I. M. (American Chemical Society, 2013)
    We report on Raman scattering measurements in mercury digallium selenide (HgGa2Se4) up to 25 GPa. We also performed, for the low-pressure defect-chalcopyrite structure, lattice-dynamics ab initio calculations at high ...
  • Nonlinear pressure dependence of the direct band gap in adamantine ordered-vacancy compounds 
    MANJÓN, F. J.; GOMIS, O.; RODRÍGUEZ-HERNÁNDEZ, P.; PÉREZ-GONZÁLEZ, E.; MUÑOZ, A.; ERRANDONEA, D.; RUIZ-FUERTES, J.; SEGURA, A.; FUENTES-CABRERA, M.; TIGINYANU, I. M.; URSAKI, V. V. (American Physical Society, 2010)
    A strong nonlinear pressure dependence of the optical absorption edge has been measured in defect chalcopyrites CdGa2Se4 and HgGa2Se4. The behavior is due to the nonlinear pressure dependence of the direct band-gap energy ...
  • Post-spinel transformations and equation of state in ZnGa2O4: Determination at high pressure by in situ x-ray diffraction 
    ERRANDONEA, D.; KUMAR, Ravhi S.; MANJÓN, F. J.; URSAKI, V. V.; RUSU, E. V. (American Physical Society, 2009)
    Room temperature angle-dispersive x-ray diffraction measurements on spinel ZnGa2O4 up to 56 GPa show evidence of two structural phase transformations. At 31.2 GPa, ZnGa2O4 undergoes a transition from the cubic spinel ...
  • Pressure-induced band anticrossing in two adamantine ordered-vacancy compounds: CdGa2S4 and HgGa2S4 
    LIANG, A.; SHI, L. T.; GALLEGO-PARRA, S.; GOMIS, O.; ERRANDONEA, D.; TIGINYANU, I. M.; URSAKI, V. V.; MANJÓN, F. J. (Elsevier, 2021)
    This paper reports a joint experimental and theoretical study of the electronic band structure of two ordered-vacancy compounds with defect-chalcopyrite structure: CdGa2S4 and HgGa2S4. High-pressure optical-absorption ...
  • Structural and elastic properties of defect chalcopyrite HgGa2S4 under high pressure 
    GOMIS, O.; SANTAMARÍA-PÉREZ, D.; VILAPLANA, R.; LUNA, R.; SANS, J. A.; MANJÓN, F. J.; ERRANDONEA, D.; PÉREZ-GONZÁLEZ, E.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; TIGINYANU, I. M.; URSAKI, V. V. (ELSEVIER, 2014)
    In this work, we focus on the study of the structural and elastic properties of mercury digallium sulfide (HgGa2S4) at high pressures. This compound belongs to the family of AB2X4 ordered-vacancy compounds and exhibits a ...
  • X-ray diffraction study on pressure-induced phase transformations and the equation of state of ZnGa2Te4 
    ERRANDONEA, D.; KUMAR, R. S.; GOMIS, O.; MANJÓN, F. J.; URSAKI, V. V.; TIGINYANU, I. M. (AIP Publishing LLC, 2013)
    We report on high-pressure x-ray diffraction measurements up to 19.8 GPa in zinc digallium telluride (ZnGa2Te4) at room temperature. An irreversible structural phase transition takes place at pressures above 12.1 GPa and ...

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