Browsing Articole by Title

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  • SERGENTU, Vladimir; URSAKI, Veacheslav; IOIŞER, Anatolii; ADAR, Eliezer (Romanian Academy Publishing House, 2018)
    In this paper a new concept of designing Fresnel lens concentrators on the basis of magnetic microwires with a complex spatial distribution of their density is proposed. The optical properties of microwires are analyzed ...
  • CIORNEA, Viorel; BARDEŢCHI, Profirie; MACOVEI, Mihai (Universitatea de Stat „Alecu Russo“ din Bălţi, 2006)
    Autorii cercetează emisia spontană colectivă a unui sistem atomar format din două particule spaţial separate. Se demonstrează ca efectele de interferenţă cuantică ce apar între diferite canale de emisie spontană şi ...
  • TIGINYANU, I. M. (Institutul de Fizică Aplicată, AŞM, 2006)
    Photonic crystals represent periodic dielectric structures designed to control the flow of electromagnetic radiation. Photonic crystals can be viewed as a subclass of a larger family of material systems called metamaterials ...
  • TIGINYANU, I. M.; SARUA, A.; IRMER, G.; MONECKE, J.; HUBBARD, S. M.; PAVLIDIS, D.; VALIAEV, V. (American Physical Society, 2001)
    GaN columnar nanostructures fabricated by electrochemical dissolution of bulk material have been studied by micro-Raman spectroscopy. The anodization induces an increase in the intensity of Raman scattering accompanied by ...
  • SARUA, A.; MONECKE, J.; IRMER, G.; TIGINYANU, I. M.; GÄRTNER, G.; HARTNAGEL, H. L. (IOP Publishing, 2001)
    Porous GaP, InP and GaAs structures fabricated by MeV ion-implantation-assisted electrochemical etching were investigated by Raman and Fourier transform infrared spectroscopy. Fröhlich modes in the frequency gap between ...
  • IRMER, G.; MONAICO, E.; TIGINYANU, I. M.; GÄRTNER, G.; URSAKI, V. V.; KOLIBABA, G. V.; NEDEOGLO, D. D. (IOP Publishing, 2009)
    Arrays of parallel pores with a diameter of around 60 nm have been introduced by anodic etching in ZnSe single crystals with a free electron concentration of 4 × 1017 cm−3. Porosity-induced Fröhlich vibrational modes were ...
  • LENK, D.; MORARI, R.; ZDRAVKOV, V. I.; ULLRICH, A.; KHAYDUKOV, Yu; OBERMEIER, G.; MÜLLER, C.; SIDORENKO, A. S.; NIDDA von, H.-A. Krug; HORN, S.; TAGIROV, L. R.; TIDECKS, R. (American Physical Society, 2017)
    In the present work a superconducting Co/CoOx/Cu41Ni59/Nb/Cu41Ni59 nanoscale thin film heterostructure is investigated, which exhibits a superconducting transition temperature, Tc, depending on the history of magnetic field ...
  • SIDORENKO, Anatolie S. (Beilstein Institute for the Advancement of Chemical Sciences, Germany, 2020)
    Nanotechnology and functional nanostructures, exciting trends of the 21st century, are topics that have penetrated and influenced nearly all areas of human activity: from microelectronics to biology, from aerospace to ...
  • CHAI, G. Y.; LUPAN, O.; RUSU, E. V.; STRATAN, G. I.; URSAKI, V. V.; SONTEA, V.; KHALLAF, H.; CHOW, L. (ELSEVIER, 2012)
    A single ZnO microwire detector for the monitoring of natural gas species is described. Single-crystal ZnO microwires were synthesized using a carbothermal reduction vapor phase transport method. It was characterized by ...
  • LUPAN, Oleg; POSTICA, Vasile; ADELUNG, Rainer; LABAT, Frédéric; CIOFINI, Ilaria; SCHÜRMANN, Ulrich; KIENLE, Lorenz; CHOW, Lee; VIANA, Bruno; PAUPORTÉ, Thierry (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2018)
    A method for surface doping and functionalization of ZnO nanowires (NWs) with Pd (Pd/ZnO) in a one-step process is presented. The main advantage of this method is to combine the simultaneous growth, surface doping, and ...
  • LEÓN, M.; LEVCENKO, S.; SYRBU, N. N.; NATEPROV, A.; TEZLEVAN, V.; MERINO, J. M.; ARUSHANOV, E. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 2006)
    Optical absorption spectra of CuIn5Se8 and CuGa3Se5 single crystals have been investigated. The energy gap E g for CuIn5Se8 (CuGa3Se5) was found to be varied from 1.27 (1.79) to 1.21 (1.71) eV in the temperature range ...
  • NEUMANN, H.; HÖRIG, W.; NOOKE, G.; SYRBU, N. N. (Elservier, 1988)
    Optical absorption spectra of PbGa2S4 are measured in the photon energy range from 2.0 to 3.2 eV and for temperatures between 32 and 300 K. PbGa2S4 is found to be an indirect-gap semiconductor with a gap energy of 2.84 eV ...
  • LOZOVANU, Ecaterina (Universitatea de Stat de Medicină şi Farmacie „Nicolae Testemiţanu“, 2013)
    The philosophical reflection of culture’s foundation is a prerequisite for the development of science. It is presented as a specific aspect of philosophical understanding of reality, in which new categorical structures ...
  • BOSTAN, Ina (Universitatea Academiei de Ştiinţe a Moldovei, 2017)
    Individul întotdeauna își duce existența în cadrul vieții sociale, iar viața socială cuprinde toate fenomenele care apar între oameni, în oricare moment al existenței lor. De aceea, activității umane îi sunt caracteristice ...
  • RUSU, Mariana; ZBANCIOC, Marius-Dan (Institutul de Matematică şi Informatică al AŞM, 2017)
    The sorting method contains a fuzzy system that classifies waste into three classes: dangerous (toxic, flammable, harmful to the environment), recyclable and undetermined. To increase the decision weight since some waste ...
  • MONAICO, Ed.; MORARI, V.; URSAKI, V. V.; MONAICO, E. I.; TIGINYANU, I. M.; NIELSCH, K. (Institutul de Fizică Aplicată, AŞM, 2018)
    Technological conditions for obtaining InP nanomembranes and nanowires by means of fast anodic etching of bulk substrates have been recently elaborated. Electrochemical etching is an easy, cost-effective, and very fast ...
  • TIGINYANU, Ion; URSAKI, Veaceslav (TUBITAK, 2014)
    We present a review of technological methods developed in recent years for the purpose of gallium nitride nanostructuring, with the main focus on fabrication of thin GaN membranes. In particular, we report on traditional ...
  • SIDORENKO, A.; PEISERT, H.; NEUMANN, H.; CHASSÉ, T. (ELSEVIER, 2006)
    The growth of epitaxial GaN films on (0001)-sapphire has been investigated using X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED). In order to investigate the mechanism of the growth in ...
  • SIDORENKO, A.; PEISERT, H.; NEUMANN, H.; CHASSE, T. (Elsevier, 2007)
    We present X-ray Photoemission (XPS) and low energy electron diffraction (LEED) investigations of initial stages of GaN film growth on sapphire(0001) and SiC(0001)-√3×√3:Ga. The growth of ultrathin films is performed by ...
  • COJOCARI, O.; POPA, V.; URSAKI, V. V.; TIGINYANU, I. M.; HARTNAGEL, H. L.; DAUMILLER, I. (IOP Publishing, 2004)
    This paper presents the results of a Pt/n-GaN Schottky contact technology development based on electrochemical metal deposition. Three different technological approaches are used to fabricate GaN varactor diodes. The effects ...

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