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  • The fundamental absorption edge of PbGa2S4 
    NEUMANN, H.; HÖRIG, W.; NOOKE, G.; SYRBU, N. N. (Elservier, 1988)
    Optical absorption spectra of PbGa2S4 are measured in the photon energy range from 2.0 to 3.2 eV and for temperatures between 32 and 300 K. PbGa2S4 is found to be an indirect-gap semiconductor with a gap energy of 2.84 eV ...
  • Fundamentele culturii din perspectiva reflecţiei filosofice 
    LOZOVANU, Ecaterina (Universitatea de Stat de Medicină şi Farmacie „Nicolae Testemiţanu“, 2013)
    The philosophical reflection of culture’s foundation is a prerequisite for the development of science. It is presented as a specific aspect of philosophical understanding of reality, in which new categorical structures ...
  • Fundamentele sociale, morale și religioase ale sancțiunii juridice 
    BOSTAN, Ina (Universitatea Academiei de Ştiinţe a Moldovei, 2017)
    Individul întotdeauna își duce existența în cadrul vieții sociale, iar viața socială cuprinde toate fenomenele care apar între oameni, în oricare moment al existenței lor. De aceea, activității umane îi sunt caracteristice ...
  • Further Remarks on Elementary Radicals and Associated Filters of Ideals 
    COJUHARI, E. P.; GARDNER, B. J. (Australian Mathematical Publishing Association Inc., 2021)
    Ryabukhin showed that there is a correspondence between elementary radical classes of rings and certain filters of ideals of the free ring on one generator, analogous to the Gabriel correspondence between torsion classes ...
  • Fuzzy controlled system for hypothermic Brain therapy 
    COJOCARU, Victor; MARDARI, Vladimir (The Publishing House of the Romanian Academy, 2014)
    We propose a device for therapeutic hypothermia implemented with Peltier elements controlled by a microcontroller, operated from a guided user interface. The control is based on fuzzy logic and aims at keeping a low ...
  • Fuzzy logic algorithm for use in controlled hypothermia 
    COJOCARU, Victor; VRABII, Daniel (IEEE, 2015)
    We analyze a device designed to perform therapeutic hypothermia in the skull. This device is proposed for use in hospitals profile especially for rapid intervention crews. The cooling device uses Peltier elements that allow ...
  • Fuzzy logic in automatic analysis of Google Analytics data 
    CHILAT, Sergiu (Institute of Mathematics and Computer Science, ASM, 2014)
    This article presents a method for automation of the process of data analysis generated from Google Analytics, using fuzzy logic. After the method implementation, the user will get the most useful and suitable content ...
  • Fuzzy Rule-based System for Pattern Recognition and Automated Classification 
    RUSU, Mariana; ZBANCIOC, Marius-Dan (Institutul de Matematică şi Informatică al AŞM, 2017)
    The sorting method contains a fuzzy system that classifies waste into three classes: dangerous (toxic, flammable, harmful to the environment), recyclable and undetermined. To increase the decision weight since some waste ...
  • Fuzzy Sensor Network for Mobile Robots Navigation 
    ABABII, Victor; SUDACEVSCHI, Viorica; ALEXEI, Victoria; MELNIC, Radu; BORDIAN, Dimitrie; NISTIRIUC, Ana (IEEE, 2019)
    This paper presents the results of the research carried out in the development of Fuzzy sensor networks for navigation mobile robots in closed environments. Wi-Fi technology is used for locating and moving robots which ...
  • GaAs nanowires obtained via electrochemical etching of bulk substrates 
    MONAICO, Ed.; MORARI, V.; URSAKI, V. V.; MONAICO, E. I.; TIGINYANU, I. M.; NIELSCH, K. (Institutul de Fizică Aplicată, AŞM, 2018)
    Technological conditions for obtaining InP nanomembranes and nanowires by means of fast anodic etching of bulk substrates have been recently elaborated. Electrochemical etching is an easy, cost-effective, and very fast ...
  • Galvano-thermomagnetic properties of Bi/sub 1-x/Sb/sub x/ nanowires at semiconductor-semimetal transition induced by elastic elongation 
    NIKOLAEVA, A.; BODIUL, P.; KONOPKO, L.; PARA, G. (IEEE, 2002)
    In the work thin single crystal (0.3 < d < 5 /spl mu/m) wires Bi/sub 1-x/Sb/sub x/ obtained by the liquid phase casting in a glass coating were investigated under elastic deformations up to 2-3% relative elongation in the ...
  • GaN nanomembranes as memristors with self-rectification 
    DRAGOMAN, Mircea; CIOBANU, Vladimir; DRAGOMAN, Daniela; DINESCU, Adrian; BRANISTE, Tudor; TIGINYANU, Ion (Institute of Nanocience and Nanotechnology, INN, 2017)
    We have recently shown that GaN ultrathin membranes suspended on GaN nanowires having a thickness of 15 nm and planar dimensions of 12×184 microns are acting as memristive devices. The physical effect which explains this ...
  • GaN nanostructuring for the fabrication of thin membranes and emerging applications 
    TIGINYANU, Ion; URSAKI, Veaceslav (TUBITAK, 2014)
    We present a review of technological methods developed in recent years for the purpose of gallium nitride nanostructuring, with the main focus on fabrication of thin GaN membranes. In particular, we report on traditional ...
  • GaN nucleation on (0 0 0 1)-sapphire via ion-induced nitridation of gallium 
    SIDORENKO, A.; PEISERT, H.; NEUMANN, H.; CHASSÉ, T. (ELSEVIER, 2006)
    The growth of epitaxial GaN films on (0001)-sapphire has been investigated using X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED). In order to investigate the mechanism of the growth in ...
  • GaN nucleation on 6H-SiC(0 0 0 1)-(√3×√3)R30°:Ga and c-sapphire via ion-induced nitridation of gallium: Wetting layers 
    SIDORENKO, A.; PEISERT, H.; NEUMANN, H.; CHASSE, T. (Elsevier, 2007)
    We present X-ray Photoemission (XPS) and low energy electron diffraction (LEED) investigations of initial stages of GaN film growth on sapphire(0001) and SiC(0001)-√3×√3:Ga. The growth of ultrathin films is performed by ...
  • GaN Schottky multiplier diodes prepared by electroplating: a study of passivation technology 
    COJOCARI, O.; POPA, V.; URSAKI, V. V.; TIGINYANU, I. M.; HARTNAGEL, H. L.; DAUMILLER, I. (IOP Publishing, 2004)
    This paper presents the results of a Pt/n-GaN Schottky contact technology development based on electrochemical metal deposition. Three different technological approaches are used to fabricate GaN varactor diodes. The effects ...
  • GaN versus ZnO: Growth, properties and applications 
    TIGINYANU, Ion (Academica Greifswald, 2017)
    GaN and ZnO are wide band gap semiconductor compounds with unique properties favourable for the development of short-wavelength light emitting devices and high-power electronics. From the point of view of applications, ...
  • A GaN-based two-sensor array for methane detection in an ethanol environment 
    POPA, V.; TIGINYANU, I. M.; URSAKI, V. V.; VOLCIUS, O.; MORKOÇ, H. (IOP Publishing, 2006)
    We demonstrate that photoelectrochemical (PEC) etching of GaN layers in KOH or H3PO4 solutions leads to the formation of specific surface morphologies which cause the material to exhibit different sensitivities to certain ...
  • GaP template based semiconductor-metal nanocomposite 
    ALBU, Sergiu; MONAICO, Eduard; TIGINYANU, I. M.; URSAKI, V. V. (Institutul de Fizică Aplicată, AŞM, 2006)
    The interest in nanometer-scale materials and devices stimulated the development of alternative technologies in recent years. Metal nanowires are one of the most attractive materials because of their unique properties ...
  • Gas sensing characterization of tellurium thin films by Kelvin probe technique 
    TSIULYANU, D.; MARIAN, S.; MOCREAC, O. (Institutul de Fizică Aplicată al AŞM, 2012)
    In this paper, the change of work function ( Δφ ) of the tellurium thin films was studied in response to different concentrations of nitrogen dioxide, carbon oxide, ozone and water vapor using a KP with a gold grid reference ...

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