183 GHz Mixer on InGaAs Schottky Diodes

Abstract

This work reports on experimental results of a 183 GHz sub-harmonically pumped mixer based on InGaAs antiparallel diode pair. The diode structure provides extremely low parasitic capacitance of about 2.5 fF. Roughly estimated series resistance junction capacitance and ideality factor 10Ω, 4fF/anode and 1.2, respectively. The optimal LO-Power is as low as 0.34 mW, whereas usable performance can be achieved even with less than 0.2 mW.