183 GHz Mixer on InGaAs Schottky Diodes

OPREA, I.; WALBER, A.; COJOCARI, O.; GIBSON, H.; ZIMMERMANN, R.; HARTNAGEL, H. L.

dc.contributor.author	OPREA, I.
dc.contributor.author	WALBER, A.
dc.contributor.author	COJOCARI, O.
dc.contributor.author	GIBSON, H.
dc.contributor.author	ZIMMERMANN, R.
dc.contributor.author	HARTNAGEL, H. L.
dc.date.accessioned	2021-09-27T11:17:41Z
dc.date.available	2021-09-27T11:17:41Z
dc.date.issued	2010
dc.identifier.citation	OPREA, I., WALBER, A., COJOCARI, O. et al. 183 GHz Mixer on InGaAs Schottky Diodes. In: 21st International Symposium on Space Terahertz Technology, 23-25 March 2010, Oxford, 2010, pp. 159-160.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/17419
dc.description.abstract	This work reports on experimental results of a 183 GHz sub-harmonically pumped mixer based on InGaAs antiparallel diode pair. The diode structure provides extremely low parasitic capacitance of about 2.5 fF. Roughly estimated series resistance junction capacitance and ideality factor 10Ω, 4fF/anode and 1.2, respectively. The optimal LO-Power is as low as 0.34 mW, whereas usable performance can be achieved even with less than 0.2 mW.	en_US
dc.language.iso	en	en_US
dc.publisher	Oxford	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	pumped mixers	en_US
dc.subject	mixers	en_US
dc.subject	indium gallium arsenide	en_US
dc.title	183 GHz Mixer on InGaAs Schottky Diodes	en_US
dc.type	Article	en_US