Evaluation of hole drift mobility in glassy As2S3 in the temperature range 77 - 330 K

Abstract

The temperature behaviour of time-averaged hole drift mobility in As2S3 glass was studied in the range 77-330 K on the basis of temperature dependence of steady-state photoinduced absorption. The time-averaged hole mobility was found to be thermally activated at high temperatures with the activation energy ~0.9 eV, of the order of 10 -10 cm 2 /Vs at room temperature, but almost temperature independent below ~ 130 K.