Analysis of self-pulsation characteristics of InGaN laser diode

TRONCIU, V. Z.; YAMADA, Minoru; OHNO, Tomoki; ITO, Shigetoshi; KAWAKAMI, Toshiyuki; TANEYA, Mototaka

Analysis of self-pulsation characteristics of InGaN laser diode

TRONCIU, V. Z.; YAMADA, Minoru; OHNO, Tomoki; ITO, Shigetoshi; KAWAKAMI, Toshiyuki; TANEYA, Mototaka

URI: https://doi.org/10.1002/pssc.200303377
http://repository.utm.md/handle/5014/13964

Date: 2003

Abstract:

Self-pulsation characteristics of InGaN laser diode emitting at 395 nm wavelength are investigated theoretically and experimentally. The laser structure consists of a multi-quantum well InGaN active layer and an InGaN single quantum well saturable absorber. Self-pulsations with the frequency range from 1.6 to 2.9 GHz have been obtained. The results show a good agreement between measured and calculated characteristics of self-pulsation. We also discuss the impact of the saturable absorber on the laser dynamics.