Analysis of self-pulsation characteristics of InGaN laser diode

TRONCIU, V. Z.; YAMADA, Minoru; OHNO, Tomoki; ITO, Shigetoshi; KAWAKAMI, Toshiyuki; TANEYA, Mototaka

dc.contributor.author	TRONCIU, V. Z.
dc.contributor.author	YAMADA, Minoru
dc.contributor.author	OHNO, Tomoki
dc.contributor.author	ITO, Shigetoshi
dc.contributor.author	KAWAKAMI, Toshiyuki
dc.contributor.author	TANEYA, Mototaka
dc.date.accessioned	2021-03-30T12:34:32Z
dc.date.available	2021-03-30T12:34:32Z
dc.date.issued	2003
dc.identifier.citation	TRONCIU, V. Z., YAMADA, Minoru, OHNO, Tomoki. Analysis of self-pulsation characteristics of InGaN laser diode. In: Physica Status Solidi (c). 2003, N. 7, pp. 2296-2299. ISSN 1862-6351 (print), 1610-1642 (web).	en_US
dc.identifier.uri	https://doi.org/10.1002/pssc.200303377
dc.identifier.uri	http://repository.utm.md/handle/5014/13964
dc.description	Access full text - https://doi.org/10.1002/pssc.200303377	en_US
dc.description.abstract	Self-pulsation characteristics of InGaN laser diode emitting at 395 nm wavelength are investigated theoretically and experimentally. The laser structure consists of a multi-quantum well InGaN active layer and an InGaN single quantum well saturable absorber. Self-pulsations with the frequency range from 1.6 to 2.9 GHz have been obtained. The results show a good agreement between measured and calculated characteristics of self-pulsation. We also discuss the impact of the saturable absorber on the laser dynamics.	en_US
dc.language.iso	en	en_US
dc.publisher	WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	self-pulsation	en_US
dc.subject	laser diodes	en_US
dc.subject	diodes	en_US
dc.subject	indium gallium nitride lasers	en_US
dc.title	Analysis of self-pulsation characteristics of InGaN laser diode	en_US
dc.type	Article	en_US