Schottky barrier on the InGaAs/InP heterostructures grown by the CL-VPE technique for photodetectors

RUSU, E.; BUDIANU, E.; NAN, S.; PURICA, M.

dc.contributor.author	RUSU, E.
dc.contributor.author	BUDIANU, E.
dc.contributor.author	NAN, S.
dc.contributor.author	PURICA, M.
dc.date.accessioned	2021-01-14T09:48:05Z
dc.date.available	2021-01-14T09:48:05Z
dc.date.issued	1996
dc.identifier.citation	RUSU, E., BUDIANU, E., NAN, S. et al. Schottky barrier on the InGaAs/InP heterostructures grown by the CL-VPE technique for photodetectors. In: International Semiconductor Conference: proceedings CAS'96, 12 Oct. 1996, Sinaia, Romania, 1996, V. 1996, pp. 211-214.	en_US
dc.identifier.uri	https://doi.org/10.1109/SMICND.1996.557344
dc.identifier.uri	http://repository.utm.md/handle/5014/12436
dc.description	Acces full text: https://doi.org/10.1109/SMICND.1996.557344	en_US
dc.description.abstract	The Schottky barriers of Ag, Ti, Ni, on n and p iso-type heterostructures of In/sub 0.53/Ga/sub 0.47/As/InP, grown by the CL-VPE technique, have shown that values of 0.6 eV for Ag/p-InGaAs barrier height and of 0.46 eV on n-InGaAs, by growing an n-InP interlayer may be obtained.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	Schottky barriers	en_US
dc.subject	heterostructures	en_US
dc.subject	photodetectors	en_US
dc.title	Schottky barrier on the InGaAs/InP heterostructures grown by the CL-VPE technique for photodetectors	en_US
dc.type	Article	en_US