dc.contributor.author | RUSU, E. | |
dc.contributor.author | BUDIANU, E. | |
dc.contributor.author | NAN, S. | |
dc.contributor.author | PURICA, M. | |
dc.date.accessioned | 2021-01-14T09:48:05Z | |
dc.date.available | 2021-01-14T09:48:05Z | |
dc.date.issued | 1996 | |
dc.identifier.citation | RUSU, E., BUDIANU, E., NAN, S. et al. Schottky barrier on the InGaAs/InP heterostructures grown by the CL-VPE technique for photodetectors. In: International Semiconductor Conference: proceedings CAS'96, 12 Oct. 1996, Sinaia, Romania, 1996, V. 1996, pp. 211-214. | en_US |
dc.identifier.uri | https://doi.org/10.1109/SMICND.1996.557344 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/12436 | |
dc.description | Acces full text: https://doi.org/10.1109/SMICND.1996.557344 | en_US |
dc.description.abstract | The Schottky barriers of Ag, Ti, Ni, on n and p iso-type heterostructures of In/sub 0.53/Ga/sub 0.47/As/InP, grown by the CL-VPE technique, have shown that values of 0.6 eV for Ag/p-InGaAs barrier height and of 0.46 eV on n-InGaAs, by growing an n-InP interlayer may be obtained. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | Schottky barriers | en_US |
dc.subject | heterostructures | en_US |
dc.subject | photodetectors | en_US |
dc.title | Schottky barrier on the InGaAs/InP heterostructures grown by the CL-VPE technique for photodetectors | en_US |
dc.type | Article | en_US |
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