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New manufacturing technology for InP epitaxial layers and properties of Schottky diodes made on their basis
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| dc.contributor.author | ARSENTIEV, I. N. | |
| dc.contributor.author | BOBYI, A. V. | |
| dc.contributor.author | BOLTOVETS, N. S. | |
| dc.contributor.author | IVANOV, V. N. | |
| dc.contributor.author | KONAKOVA, R. V. | |
| dc.contributor.author | KUDRYK, Y. Y. | |
| dc.contributor.author | LYTVYN, O. S. | |
| dc.contributor.author | MILENIN, V. V. | |
| dc.contributor.author | TARASOV, I. S. | |
| dc.contributor.author | BELYAEV, A. E. | |
| dc.contributor.author | RUSU, E. V. | |
| dc.date.accessioned | 2021-01-13T10:49:22Z | |
| dc.date.available | 2021-01-13T10:49:22Z | |
| dc.date.issued | 2004 | |
| dc.identifier.citation | ARSENTIEV, I. N., BOBYI, A. V., BOLTOVETS, N. S. et al. New manufacturing technology for InP epitaxial layers and properties of Schottky diodes made on their basis. In: International Crimean Conference "Microwave and Telecommunication Technology": proceedings, 14th Edition, 13-17 Sept. 2004, Sevastopoll, Ukraine, 2004, pp. 528-529. IEEE Cat. No.04EX843. | en_US |
| dc.identifier.uri | https://doi.org/10.1109/CRMICO.2004.183319 | |
| dc.identifier.uri | http://repository.utm.md/handle/5014/12427 | |
| dc.description | Acces full text: https://doi.org/10.1109/CRMICO.2004.183319 | en_US |
| dc.description.abstract | A new technological approach to production of structurally perfect epitaxial films LPE-grown on "soft" porous n/sup +/-InP substrates is considered. We studied surface morphology, boundary between phases in TiB/sub x/-n-InP contact and I-V curves of Au-TiB/sub x/-n-InP Schottky diodes made on "soft" and "rigid" (standard) n/sup +/-InP substrates. The advantages of epitaxial layers grown on porous n/sup +/-InP substrates and barrier structures on their basis are demonstrated. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE | en_US |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
| dc.subject | epitaxial films | en_US |
| dc.subject | films | en_US |
| dc.subject | epitaxial layers | en_US |
| dc.subject | layers | en_US |
| dc.subject | Schottky diodes | en_US |
| dc.subject | diodes | en_US |
| dc.subject | substrates | en_US |
| dc.title | New manufacturing technology for InP epitaxial layers and properties of Schottky diodes made on their basis | en_US |
| dc.type | Article | en_US |
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