Formation of InGaAs layers onto InP substrates by liquid-phase epitaxy

SYRBU, N. N.; DOROGAN, V. V.; CREŢU, R. V.

Formation of InGaAs layers onto InP substrates by liquid-phase epitaxy

SYRBU, N. N.; DOROGAN, V. V.; CREŢU, R. V.

URI: https://doi.org/10.1016/0030-4018(96)00382-3
http://repository.utm.md/handle/5014/12340

Date: 1996

Abstract:

The results of In0.53Ga0.47As InP epitaxial structure interface investigation are presented. It is shown that the transition from InP to In0.53Ga0.47As layer is associated with an interfacial transitional layer formation with a gradient composition. The dynamics of such layer formation has been followed by infrared spectroscopy.