Formation of InGaAs layers onto InP substrates by liquid-phase epitaxy

SYRBU, N. N.; DOROGAN, V. V.; CREŢU, R. V.

dc.contributor.author	SYRBU, N. N.
dc.contributor.author	DOROGAN, V. V.
dc.contributor.author	CREŢU, R. V.
dc.date.accessioned	2020-12-29T14:21:29Z
dc.date.available	2020-12-29T14:21:29Z
dc.date.issued	1996
dc.identifier.citation	SYRBU, N. N., DOROGAN, V. V., CREŢU, R. V. Formation of InGaAs layers onto InP substrates by liquid-phase epitaxy. In: Optics Communications, 1996, V. 132, Nr. 5, pp. 449-451. ISSN 0030-4018.	en_US
dc.identifier.uri	https://doi.org/10.1016/0030-4018(96)00382-3
dc.identifier.uri	http://repository.utm.md/handle/5014/12340
dc.description	Access full text – https://doi.org/10.1016/0030-4018(96)00382-3	en_US
dc.description.abstract	The results of In0.53Ga0.47As InP epitaxial structure interface investigation are presented. It is shown that the transition from InP to In0.53Ga0.47As layer is associated with an interfacial transitional layer formation with a gradient composition. The dynamics of such layer formation has been followed by infrared spectroscopy.	en_US
dc.language.iso	en	en_US
dc.publisher	Elservier	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	solid solutions	en_US
dc.subject	epitaxies	en_US
dc.subject	reflectivity	en_US
dc.subject	phonons	en_US
dc.title	Formation of InGaAs layers onto InP substrates by liquid-phase epitaxy	en_US
dc.type	Article	en_US