New narrow-gap semiconducting solid solutions

Abstract

Within the frames of the method based on the genesis of an electronic spectrum out of atomic p-states (p-model [1]) the band structure rearrangement in dependence on composition of cubic solid solutions (TIB5C62)1−x(2A4B6)x (2A4B6)xhas been investigated. These compounds are shown to be narrow-gap semiconductors. The existence of a new group of solid solutions (TlSbC62)1−x(2PbB6)x and (TlBiC62)1−x(2SnTe)x has been predicted, for which the transition through a gapless state in characteristic. The dependencies of the band gap and of effective masses on composition have been calculated.