New narrow-gap semiconducting solid solutions

KANTSER, V. G.; MALKOVA, N. M.; SIDORENKO, A. S.

dc.contributor.author	KANTSER, V. G.
dc.contributor.author	MALKOVA, N. M.
dc.contributor.author	SIDORENKO, A. S.
dc.date.accessioned	2020-12-14T14:20:02Z
dc.date.available	2020-12-14T14:20:02Z
dc.date.issued	1985
dc.identifier.citation	KANTSER, V. G., MALKOVA, N. M., SIDORENKO, A. S. New narrow-gap semiconducting solid solutions. In: Solid State Communications, 1985, V. 56, Nr. 6, pp. 513-517. ISSN 0038-1098.	en_US
dc.identifier.uri	https://doi.org/10.1016/0038-1098(85)90705-7
dc.identifier.uri	http://repository.utm.md/handle/5014/12104
dc.description	Access full text - https://doi.org/10.1016/0038-1098(85)90705-7	en_US
dc.description.abstract	Within the frames of the method based on the genesis of an electronic spectrum out of atomic p-states (p-model [1]) the band structure rearrangement in dependence on composition of cubic solid solutions (TIB5C62)1−x(2A4B6)x (2A4B6)xhas been investigated. These compounds are shown to be narrow-gap semiconductors. The existence of a new group of solid solutions (TlSbC62)1−x(2PbB6)x and (TlBiC62)1−x(2SnTe)x has been predicted, for which the transition through a gapless state in characteristic. The dependencies of the band gap and of effective masses on composition have been calculated.	en_US
dc.language.iso	en	en_US
dc.publisher	Elservier	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	spectrum	en_US
dc.subject	solid solutions	en_US
dc.title	New narrow-gap semiconducting solid solutions	en_US
dc.type	Article	en_US