Influence of preparation parameters for low-energy ion beam nitridation of III–V semiconductor surfaces

HECHT, J.-D.; FROST, F.; SIDORENKO, A.; HIRSCH, D.; NEUMANN, H.; SCHINDLER, A.; KRASNIKOW, S.; ZHANG, L.; CHASSÉ, T.

Influence of preparation parameters for low-energy ion beam nitridation of III–V semiconductor surfaces

HECHT, J.-D.; FROST, F.; SIDORENKO, A.; HIRSCH, D.; NEUMANN, H.; SCHINDLER, A.; KRASNIKOW, S.; ZHANG, L.; CHASSÉ, T.

URI: https://doi.org/10.1016/S0038-1101(02)00381-7
http://repository.utm.md/handle/5014/11918

Date: 2003

Abstract:

The nitridation of InAs, InP, and InSb by low-energy N2+ ion bombardment at different preparation parameters was studied by near-edge X-ray absorption fine structure, photoemission spectroscopy (PES), and resonant PES measurements. The investigated surface nitride layers mainly consist of compounds with In–N, V–N bonds and interstitial nitrogen (Ni). The final remaining nitride layer composition strongly depends on the chosen preparation parameters. The nitridation affect composition and annealing temperature offers several opportunities to affect defect curing by ordering and removing oxinitrides, N–O bonds and Ni from nitrided surfaces.