Giant oscillations of coupling strength on Mo/Si multilayers with the constant thickness of semiconductor layers

Abstract

We report the observation of anisotropy ratio γ and interlayer coupling strength oscillations with variation of metal layer thickness on Mo/Si multilayer series with constant Si layer thickness. These oscillations correlate with previously found oscillations of TC, R300/Rn and dHc⊥/dT. The giant amplitude of γ oscillations makes one to believe that all oscillation effects are due to the variation of the Josephson coupling strength. Possible origin of these unusual effects is discussed.