Giant oscillations of coupling strength on Mo/Si multilayers with the constant thickness of semiconductor layers

FOGEL, Nina Ya.; TURUTANOV, Oleg G.; SIDORENKO, Anatoly S.; BUCHSTAB, Eugene I.

dc.contributor.author	FOGEL, Nina Ya.
dc.contributor.author	TURUTANOV, Oleg G.
dc.contributor.author	SIDORENKO, Anatoly S.
dc.contributor.author	BUCHSTAB, Eugene I.
dc.date.accessioned	2020-12-03T11:09:23Z
dc.date.available	2020-12-03T11:09:23Z
dc.date.issued	1996
dc.identifier.citation	FOGEL, Nina Ya., TURUTANOV, Oleg G., SIDORENKO, Anatoly S.et al. Giant oscillations of coupling strength on Mo/Si multilayers with the constant thickness of semiconductor layers. In: Czechoslovak Journal of Physics. 1996, V. 46, Iss. 2, pp. 731-732. ISSN 1572-9486(web), 0011-4626 (print).	en_US
dc.identifier.uri	https://doi.org/10.1007/BF02583673
dc.identifier.uri	http://repository.utm.md/handle/5014/11915
dc.description	Access full text - https://doi.org/10.1007/BF02583673	en_US
dc.description.abstract	We report the observation of anisotropy ratio γ and interlayer coupling strength oscillations with variation of metal layer thickness on Mo/Si multilayer series with constant Si layer thickness. These oscillations correlate with previously found oscillations of TC, R300/Rn and dHc⊥/dT. The giant amplitude of γ oscillations makes one to believe that all oscillation effects are due to the variation of the Josephson coupling strength. Possible origin of these unusual effects is discussed.	en_US
dc.language.iso	en	en_US
dc.publisher	Springer Nature Switzerland	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	anisotropy	en_US
dc.subject	metal layers	en_US
dc.subject	layers	en_US
dc.subject	oscillations	en_US
dc.title	Giant oscillations of coupling strength on Mo/Si multilayers with the constant thickness of semiconductor layers	en_US
dc.type	Article	en_US