Giant oscillations of coupling strength in Mo/Si multilayers with constant semiconductor thickness

Abstract

We report the observation of anisotropy ratio γ and interlayer-coupling-strength oscillations with variation of metal-layer thickness in Mo/Si multilayer series with constant Si-layer thickness. These oscillations correlate with previously found oscillations of Tc, R300/Rn, and dHc/dT. The giant amplitude of γ oscillations makes one believe that all oscillation effects are due to the variation of the Josephson coupling. The possible origin of these unusual effects is discussed.