Giant oscillations of coupling strength in Mo/Si multilayers with constant semiconductor thickness

FOGEL, Nina Ya.; TURUTANOV, Oleg G.; SIDORENKO, Anatoly S.; BUCHSTAB, Evgeny I.

dc.contributor.author	FOGEL, Nina Ya.
dc.contributor.author	TURUTANOV, Oleg G.
dc.contributor.author	SIDORENKO, Anatoly S.
dc.contributor.author	BUCHSTAB, Evgeny I.
dc.date.accessioned	2020-12-03T10:45:52Z
dc.date.available	2020-12-03T10:45:52Z
dc.date.issued	1997
dc.identifier.citation	FOGEL, Nina Ya., TURUTANOV, Oleg G., SIDORENKO, Anatoly S. et al. Giant oscillations of coupling strength in Mo/Si multilayers with constant semiconductor thickness. In: Physical Review B. 1997, V. 56, Iss. 5, pp. 2372-2375. ISSN 1098-0121 (print), 1550-235X (web).	en_US
dc.identifier.uri	https://doi.org/10.1103/PhysRevB.56.2372
dc.identifier.uri	http://repository.utm.md/handle/5014/11913
dc.description	Access full text - https://doi.org/10.1103/PhysRevB.56.2372	en_US
dc.description.abstract	We report the observation of anisotropy ratio γ and interlayer-coupling-strength oscillations with variation of metal-layer thickness in Mo/Si multilayer series with constant Si-layer thickness. These oscillations correlate with previously found oscillations of Tc, R300/Rn, and dHc/dT. The giant amplitude of γ oscillations makes one believe that all oscillation effects are due to the variation of the Josephson coupling. The possible origin of these unusual effects is discussed.	en_US
dc.language.iso	en	en_US
dc.publisher	American Physical Society	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	anisotropy	en_US
dc.subject	oscillations	en_US
dc.title	Giant oscillations of coupling strength in Mo/Si multilayers with constant semiconductor thickness	en_US
dc.type	Article	en_US