Raman and electrical characterization of n-InP implanted by 630-keV nitrogen

TIGINYANU, I. M.; MIAO, J.; HARTNAGEL, H. L.; RUCK, D.; TINSCHERT, K.; URSAKI, V. V.; ICHIZLI, V. M.

dc.contributor.author	TIGINYANU, I. M.
dc.contributor.author	MIAO, J.
dc.contributor.author	HARTNAGEL, H. L.
dc.contributor.author	RUCK, D.
dc.contributor.author	TINSCHERT, K.
dc.contributor.author	URSAKI, V. V.
dc.contributor.author	ICHIZLI, V. M.
dc.date.accessioned	2020-11-20T12:48:19Z
dc.date.available	2020-11-20T12:48:19Z
dc.date.issued	1996
dc.identifier.citation	TIGINYANU, I. M., MIAO, J., HARTNAGEL, H. L. et al. Raman and electrical characterization of n-InP implanted by 630-keV nitrogen. In: International Conference on Indium Phosphide and Related Materials: pros. of 8th conf., 21-25 April 1996, Schwabisch-Gmund, Germany, 1996, pp. 598-601. ISBN 0-7803-3283-0.	en_US
dc.identifier.uri	https://doi.org/10.1109/ICIPRM.1996.492319
dc.identifier.uri	http://repository.utm.md/handle/5014/11622
dc.description	Acces full text: https://doi.org/10.1109/ICIPRM.1996.492319	en_US
dc.description.abstract	The goal of this work was to study the peculiarities of lattice disorder and conductivity compensation caused by N-implantation in liquid encapsulated Czochralski grown n-InP single crystals. The ion-induced damage of the lattice was probed by resonant Raman scattering (RS) measurements. Layers with resistivity as high as 10/sup 4/ /spl Omega/.cm were formed by implantation and subsequent annealing of the samples which allowed one to fabricate InP membranes for sensor applications by using selective electrochemical etching techniques.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	indium compounds	en_US
dc.subject	semiconductors	en_US
dc.subject	nitrogen	en_US
dc.subject	ion implantation	en_US
dc.subject	semiconductor doping	en_US
dc.subject	Raman spectra	en_US
dc.subject	crystals	en_US
dc.subject	annealing	en_US
dc.subject	electrochemistry	en_US
dc.subject	etching	en_US
dc.subject	lattices	en_US
dc.subject	membranes	en_US
dc.subject	sensors	en_US
dc.subject	electrochemical etching	en_US
dc.subject	indium phosphide	en_US
dc.subject	conducting materials	en_US
dc.subject	plasma	en_US
dc.title	Raman and electrical characterization of n-InP implanted by 630-keV nitrogen	en_US
dc.type	Article	en_US