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Zn/sup +//P/sup +/ and Zn/sup +//As/sup +/ co-implantation in InP single crystals
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| dc.contributor.author | URSAKI, V. V. | |
| dc.contributor.author | TIGINYANU, I. M. | |
| dc.contributor.author | ICHIZLI, V. M. | |
| dc.contributor.author | TERLETSKY, A. I. | |
| dc.contributor.author | PYSHNAYA, N. B. | |
| dc.contributor.author | RADAUTSAN, S. I. | |
| dc.date.accessioned | 2020-11-20T12:04:03Z | |
| dc.date.available | 2020-11-20T12:04:03Z | |
| dc.date.issued | 1996 | |
| dc.identifier.citation | URSAKI, V. V., TIGINYANU, I. M., ICHIZLI, V. M. et al. Zn/sup +//P/sup +/ and Zn/sup +//As/sup +/ co-implantation in InP single crystals. In: International Semiconductor Conference: pros. CAS'96, 12 Oct. 1996, Sinaia, Romania, 1996, V. 2, pp. 401-404. ISBN 0-7803-3223-7. | en_US |
| dc.identifier.uri | https://doi.org/10.1109/SMICND.1996.557405 | |
| dc.identifier.uri | http://repository.utm.md/handle/5014/11616 | |
| dc.description | Acces full text: https://doi.org/10.1109/SMICND.1996.557405 | en_US |
| dc.description.abstract | The activation efficiency of zinc impurity co-implanted with P/sup +/ and As/sup +/ ions in InP was studied by Hall-effect measurements. Both P/sup +/ and As/sup +/ co-implantations followed by post-implantation annealing at 400 to 600/spl deg/C in InP single crystals have been found to result in a decrease of impurity activation. At the same time an improvement of activation efficiency was observed at annealing temperatures T/sub ann/>600/spl deg/C. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE | en_US |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
| dc.subject | indium compounds | en_US |
| dc.subject | semiconductors | en_US |
| dc.subject | ion implantation | en_US |
| dc.subject | annealing | en_US |
| dc.subject | zinc | en_US |
| dc.subject | phosphorus | en_US |
| dc.subject | single crystals | en_US |
| dc.subject | indium phosphide | en_US |
| dc.subject | crystals | en_US |
| dc.subject | impurities | en_US |
| dc.subject | gallium arsenide | en_US |
| dc.title | Zn/sup +//P/sup +/ and Zn/sup +//As/sup +/ co-implantation in InP single crystals | en_US |
| dc.type | Article | en_US |
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