Zn/sup +/, Zn/sup +//P/sup +/ and Zn/sup +//As/sup +/ implanted InP: study of electrical and symmetry properties

TIGINYANU, I. M.; KRAVETSKY, I. V.; URSAKI, V. V.; MAROWSKY, G.; HARTNAGEL, H. L.

dc.contributor.author	TIGINYANU, I. M.
dc.contributor.author	KRAVETSKY, I. V.
dc.contributor.author	URSAKI, V. V.
dc.contributor.author	MAROWSKY, G.
dc.contributor.author	HARTNAGEL, H. L.
dc.date.accessioned	2020-11-20T11:41:36Z
dc.date.available	2020-11-20T11:41:36Z
dc.date.issued	1997
dc.identifier.citation	TIGINYANU, I. M., KRAVETSKY, I. V., URSAKI, V. V. et al. Zn/sup +/, Zn/sup +//P/sup +/ and Zn/sup +//As/sup +/ implanted InP: study of electrical and symmetry properties. In: International Conference on Indium Phosphide and Related Materials: pros. 11-15 May 1997, Cape Cod, USA,1997, pp. 537-538. ISBN 0-7803-3898-7.	en_US
dc.identifier.uri	https://doi.org/10.1109/ICIPRM.1997.600221
dc.identifier.uri	http://repository.utm.md/handle/5014/11613
dc.description	Acces full text: https://doi.org/10.1109/ICIPRM.1997.600221	en_US
dc.description.abstract	InP is known to be characterized by a low activation efficiency of p-type dopants. Some attempts have been previously undertaken to use the coimplantation of P/sup +/ ions in order to improve the activation efficiency of Be and Mg in InP. The goal of this work was to study the activation efficiency of Zn impurity coimplanted with P/sup +/ and As/sup +/ ions in n-InP as well as the peculiarities of crystal lattice recovering during annealing. The latter was investigated by optical second harmonic generation (SHG) method which proved to be a versatile and sensitive probe of symmetry properties of InP near-surface layers.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	ion implantation	en_US
dc.subject	annealing	en_US
dc.subject	semiconductors	en_US
dc.subject	zinc	en_US
dc.subject	indium compounds	en_US
dc.subject	crystals	en_US
dc.subject	doping	en_US
dc.subject	coimplantation	en_US
dc.subject	impurity	en_US
dc.subject	crystal lattices	en_US
dc.subject	optical harmonic	en_US
dc.subject	indium phosphide	en_US
dc.subject	particle beams	en_US
dc.subject	optics	en_US
dc.subject	optical sensors	en_US
dc.subject	sensors	en_US
dc.title	Zn/sup +/, Zn/sup +//P/sup +/ and Zn/sup +//As/sup +/ implanted InP: study of electrical and symmetry properties	en_US
dc.type	Article	en_US