Luminescence and Photoconductivity Caused by Antisite Defects in CdIn2S4 Single Crystals

GEORGOBIANI, A. N.; GRUZINTSEV, A. N.; RATSEEV, S. A.; TEZLEVAN, V. E.; TIGINYANU, I. M.; URSAKI, V. V.

dc.contributor.author	GEORGOBIANI, A. N.
dc.contributor.author	GRUZINTSEV, A. N.
dc.contributor.author	RATSEEV, S. A.
dc.contributor.author	TEZLEVAN, V. E.
dc.contributor.author	TIGINYANU, I. M.
dc.contributor.author	URSAKI, V. V.
dc.date.accessioned	2020-11-19T11:26:17Z
dc.date.available	2020-11-19T11:26:17Z
dc.date.issued	1986
dc.identifier.citation	GEORGOBIANI, A. N., GRUZINTSEV, A. N., RATSEEV, S. A. et al. Luminescence and Photoconductivity Caused by Antisite Defects in CdIn2S4 Single Crystals. In: Crystal Research and Technology. 1986, V. 21, Nr. 2, pp. 259-263. ISSN 1521-4079.	en_US
dc.identifier.uri	https://doi.org/10.1002/crat.2170210218
dc.identifier.uri	http://repository.utm.md/handle/5014/11568
dc.description	Access full text - https://doi.org/10.1002/crat.2170210218	en_US
dc.description.abstract	Results of a study of the influence of nonstoichiometry as well as of annealing and argon ion implantation on photoluminescence and photoconductivity spectra of cadmium thioindate single crystals are presented. The energy positions of levels of antisite Incd and CdIn defects are found. The role of antisite defects in the process of conductivity compensation is analysed.	en_US
dc.language.iso	en	en_US
dc.publisher	WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	single crystals	en_US
dc.subject	crystals	en_US
dc.subject	nonstoichiometry	en_US
dc.subject	photoluminescence	en_US
dc.subject	photoconductivity	en_US
dc.subject	cadmium thioindate	en_US
dc.title	Luminescence and Photoconductivity Caused by Antisite Defects in CdIn2S4 Single Crystals	en_US
dc.type	Article	en_US