dc.contributor.author | RADAUTSAN, S. I. | |
dc.contributor.author | TIGINYANU, I. M. | |
dc.contributor.author | PYSHNAYA, N. B. | |
dc.contributor.author | URSAKI, V. V. | |
dc.date.accessioned | 2020-11-19T10:22:17Z | |
dc.date.available | 2020-11-19T10:22:17Z | |
dc.date.issued | 1994 | |
dc.identifier.citation | RADAUTSAN, S. I., TIGINYANU, I. M., PYSHNAYA, N. B.et al. Photoluminescence and conductivity compensation effects in fast-electron irradiated InP epilayers. In: Acta Physica Hungarica. 1994, V. 74, Iss. 1, pp. 161-165. ISSN 0021-4922. | en_US |
dc.identifier.uri | https://doi.org/10.1007/BF03055248 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/11566 | |
dc.description | Access full text - https://link.springer.com/article/10.1007/BF03055248 | en_US |
dc.description.abstract | Strong interaction between residual donor impurities and radiation defects was evidenced by studying the photoluminescence spectra of bound excitons in fast-electron (E=4 MeV) irradiated n-InP epilayers. A diminution of the conductivity compensation degree with the dose of electron irradiation has been observed, which proves to be connected with the intensive formation of deep (Ec-0.4 eV) radiation donor-type defects. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Springer Nature Switzerland | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | photoluminescence spectra | en_US |
dc.subject | excitons | en_US |
dc.subject | electron irradiation | en_US |
dc.title | Photoluminescence and conductivity compensation effects in fast-electron irradiated InP epilayers | en_US |
dc.type | Article | en_US |
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