Raman scattering analysis of InGaAs/InP: effect of rare earth (dysprosium) addition during liquid phase epitaxial growth

TIGINYANU, I. M.; URSAKI, V. V.; PODOR, B.; CSONTOS, L.; SHONTYA, V. P.

Raman scattering analysis of InGaAs/InP: effect of rare earth (dysprosium) addition during liquid phase epitaxial growth

TIGINYANU, I. M.; URSAKI, V. V.; PODOR, B.; CSONTOS, L.; SHONTYA, V. P.

URI: https://doi.org/10.1109/ICIPRM.1996.492320
http://repository.utm.md/handle/5014/11564

Date: 1996

Abstract:

The authors present the results of Raman scattering investigation of the effect of the variation of the Dy doping level on the properties of InGaAs layers on InP, with the aim to elucidate the mechanisms of the effects of rare earth elements in LPE of III-Vs. An important outcome of this study is that Raman scattering provides a non-destructive, simple and accurate way to characterize the InGaAs layers.