Raman scattering analysis of InGaAs/InP: effect of rare earth (dysprosium) addition during liquid phase epitaxial growth

TIGINYANU, I. M.; URSAKI, V. V.; PODOR, B.; CSONTOS, L.; SHONTYA, V. P.

dc.contributor.author	TIGINYANU, I. M.
dc.contributor.author	URSAKI, V. V.
dc.contributor.author	PODOR, B.
dc.contributor.author	CSONTOS, L.
dc.contributor.author	SHONTYA, V. P.
dc.date.accessioned	2020-11-19T09:30:33Z
dc.date.available	2020-11-19T09:30:33Z
dc.date.issued	1996
dc.identifier.citation	TIGINYANU, I. M., URSAKI, V. V., PODOR, B. et al. Raman scattering analysis of InGaAs/InP: effect of rare earth (dysprosium) addition during liquid phase epitaxial growth. In: International Conference on Indium Phosphide and Related Materials : proc. of 8th conf., 21-25 Apr. 1996, Schwabisch-Gmund, Germany, 1996, pp. 602-605.	en_US
dc.identifier.uri	https://doi.org/10.1109/ICIPRM.1996.492320
dc.identifier.uri	http://repository.utm.md/handle/5014/11564
dc.description	Acces ful text: https://doi.org/10.1109/ICIPRM.1996.492320	en_US
dc.description.abstract	The authors present the results of Raman scattering investigation of the effect of the variation of the Dy doping level on the properties of InGaAs layers on InP, with the aim to elucidate the mechanisms of the effects of rare earth elements in LPE of III-Vs. An important outcome of this study is that Raman scattering provides a non-destructive, simple and accurate way to characterize the InGaAs layers.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	Raman scattering	en_US
dc.subject	layers	en_US
dc.subject	rare earth	en_US
dc.title	Raman scattering analysis of InGaAs/InP: effect of rare earth (dysprosium) addition during liquid phase epitaxial growth	en_US
dc.type	Article	en_US