The contribution of exciton-phonon interaction and action disorder to near-band-edge extrinsic absorption in II-III2-VI4 compounds

GEORGOBIANI, A. N.; URSAKI, V. V.; RADAUTSAN, S. I.; TIGINYANU, I. M.

dc.contributor.author	GEORGOBIANI, A. N.
dc.contributor.author	URSAKI, V. V.
dc.contributor.author	RADAUTSAN, S. I.
dc.contributor.author	TIGINYANU, I. M.
dc.date.accessioned	2020-11-18T10:14:45Z
dc.date.available	2020-11-18T10:14:45Z
dc.date.issued	1985
dc.identifier.citation	GEORGOBIANI, A. N., URSAKI, V. V., RADAUTSAN, S. I. et al. The contribution of exciton-phonon interaction and action disorder to near-band-edge extrinsic absorption in II-III2-VI4 compounds. In: Solid State Communications, 1985, V. 56, Nr. 2, pp. 155-157. ISSN 0038-1098.	en_US
dc.identifier.uri	https://doi.org/10.1016/0038-1098(85)90730-6
dc.identifier.uri	http://repository.utm.md/handle/5014/11553
dc.description	Access full text - https://doi.org/10.1016/0038-1098(85)90730-6	en_US
dc.description.abstract	Results of a study of near-band-edge absorption in both initial and annealed CdGa2S4 and CdIn2S4 single crystals at different temperatures are presented. Exciton-phonon interaction and cation disorder are shown to determine the absorption edge in CdGa2S4 and CdIn2S4 sompounds correspondingly.	en_US
dc.language.iso	en	en_US
dc.publisher	ELSEVIER	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	single crystals	en_US
dc.subject	crystals	en_US
dc.title	The contribution of exciton-phonon interaction and action disorder to near-band-edge extrinsic absorption in II-III2-VI4 compounds	en_US
dc.type	Article	en_US