The influence of isochronous annealing upon the near-band-edge photoluminescence spectra of the electron-irradiated n-InP

RADAUTSAN, S. I.; TIGINYANU, I. M.; URSAKI, V. V.; KORSHUNOV, F. P.; SOBOLEV, N. A.; KUDRYAVTSEVA, E. A.

dc.contributor.author	RADAUTSAN, S. I.
dc.contributor.author	TIGINYANU, I. M.
dc.contributor.author	URSAKI, V. V.
dc.contributor.author	KORSHUNOV, F. P.
dc.contributor.author	SOBOLEV, N. A.
dc.contributor.author	KUDRYAVTSEVA, E. A.
dc.date.accessioned	2020-11-12T11:17:07Z
dc.date.available	2020-11-12T11:17:07Z
dc.date.issued	1993
dc.identifier.citation	RADAUTSAN, S. I., TIGINYANU, I. M., URSAKI, V. V. et al. The influence of isochronous annealing upon the near-band-edge photoluminescence spectra of the electron-irradiated n-InP. In: Solid State Communications, 1993, V. 85, Nr. 6, pp. 525-527. ISSN 0038-1098.	en_US
dc.identifier.uri	https://doi.org/10.1016/0038-1098(93)90012-C
dc.identifier.uri	http://repository.utm.md/handle/5014/11374
dc.description	Access full text - https://doi.org/10.1016/0038-1098(93)90012-C	en_US
dc.description.abstract	The near-band-edge photoluminescence (PL) bands observed at 1.305 and 1.392 eV (T = 4.2 K) in electron-irradiated InP single crystals and epilayers have different behaviour with increasing temperature of isochronous annealing. Moreover, the band at 1.392 eV shows a complex structure, at least in n-InP epilayers. On the ground of these new results, an earlier proposed connection between these PL bands and the Inp-antisite defect may require a revision.	en_US
dc.language.iso	en	en_US
dc.publisher	ELSEVIER	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	single crystals	en_US
dc.subject	crystals	en_US
dc.subject	epilayers	en_US
dc.subject	photoluminescence	en_US
dc.title	The influence of isochronous annealing upon the near-band-edge photoluminescence spectra of the electron-irradiated n-InP	en_US
dc.type	Article	en_US