Recombination in HgGaInS4 single crystals

ANEDDA, A.; CASU, M. B.; SERPI, A.; BURLAKOV, I. I.; TIGINYANU, I. M.; URSAKI, V. V.

dc.contributor.author	ANEDDA, A.
dc.contributor.author	CASU, M. B.
dc.contributor.author	SERPI, A.
dc.contributor.author	BURLAKOV, I. I.
dc.contributor.author	TIGINYANU, I. M.
dc.contributor.author	URSAKI, V. V.
dc.date.accessioned	2020-11-11T08:38:50Z
dc.date.available	2020-11-11T08:38:50Z
dc.date.issued	1997
dc.identifier.citation	ANEDDA, A., CASU, M. B., SERPI, A. et al. Recombination in HgGaInS4 single crystals. In: Journal of Physics and Chemistry of Solids, 1997, V. 58, Nr. 2, pp. 325-330. ISSN 0022-3697.	en_US
dc.identifier.uri	https://doi.org/10.1016/S0022-3697(96)00124-2
dc.identifier.uri	http://repository.utm.md/handle/5014/11305
dc.description	Access full text - https://doi.org/10.1016/S0022-3697(96)00124-2	en_US
dc.description.abstract	Photoelectronic processes in HgGaInS4 have been studied by photoconductivity, thermally stimulated conductivity and photoluminescence. An exponential distribution of traps with a slope of 23 meV/decade as well as a further electron trap system with an activation energy of 70 meV have been localized below the bottom of the conduction band. Radiative electron transitions are shown to occur mainly from exponentially distributed traps to an acceptor level characterized by an activation energy of 220 meV.	en_US
dc.language.iso	en	en_US
dc.publisher	ELSEVIER	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	semiconductors	en_US
dc.subject	photoelectron spectroscopy	en_US
dc.subject	luminescence	en_US
dc.subject	single crystals	en_US
dc.subject	crystals	en_US
dc.title	Recombination in HgGaInS4 single crystals	en_US
dc.type	Article	en_US