Semiconductor-electrolyte junction at the n-GaAs (n-InP)/Na/sub 2/SiO/sub 3/ solution interface

COJOCARU, A.; SHERBAN, D.; SIMASHKEVICH, A.; TIGINYANU, I.; TSIULYANU, I.; URSAKI, V.

dc.contributor.author	COJOCARU, A.
dc.contributor.author	SHERBAN, D.
dc.contributor.author	SIMASHKEVICH, A.
dc.contributor.author	TIGINYANU, I.
dc.contributor.author	TSIULYANU, I.
dc.contributor.author	URSAKI, V.
dc.date.accessioned	2020-11-09T12:42:59Z
dc.date.available	2020-11-09T12:42:59Z
dc.date.issued	2002
dc.identifier.citation	COJOCARU, A., SHERBAN, D., SIMASHKEVICH, A. et al. Semiconductor-electrolyte junction at the n-GaAs (n-InP)/Na/sub 2/SiO/sub 3/ solution interface. In: International Semiconductor Conference : proc., 8-12 Oct. 2002, Sinaia, Romania, 2002, V. 2, pp. 427-430.	en_US
dc.identifier.uri	https://doi.org/10.1109/SMICND.2002.1105884
dc.identifier.uri	http://repository.utm.md/handle/5014/11245
dc.description	Acces ful text: https://doi.org/10.1109/SMICND.2002.1105884	en_US
dc.description.abstract	The photoelectrochemical properties of the electrolyte-semiconductor interface in the chains formed by carbon auxiliary electrode-electrolyte-n-GaAs or n-InP semiconductors have been investigated. Besides bulk n-GaAs crystals also nanoporous n-GaAs material was used as a photoelectrode. Current-voltage characteristics in the dark and under illumination and spectral distribution of the photosensitivity were studied. The values of the photopotential reach 1V in the case of n-InP photoelectrode and 0.8V and 0.4V in the case of the nanoporous and bulk n-GaAs photoelectrode, respectively.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	electrolyte-semiconductors	en_US
dc.subject	semiconductors	en_US
dc.title	Semiconductor-electrolyte junction at the n-GaAs (n-InP)/Na/sub 2/SiO/sub 3/ solution interface	en_US
dc.type	Article	en_US