Micrometer-size GaN Schottky-diodes for mm-wave frequency multipliers

COJOCARI, O.; POPA, V.; URSAKI, V. V.; TIGINYANU, I. M.; MUTAMBA, K.; SAGLAM, M.; HARTNAGEL, H. L.

dc.contributor.author	COJOCARI, O.
dc.contributor.author	POPA, V.
dc.contributor.author	URSAKI, V. V.
dc.contributor.author	TIGINYANU, I. M.
dc.contributor.author	MUTAMBA, K.
dc.contributor.author	SAGLAM, M.
dc.contributor.author	HARTNAGEL, H. L.
dc.date.accessioned	2020-10-27T11:03:49Z
dc.date.available	2020-10-27T11:03:49Z
dc.date.issued	2004
dc.identifier.citation	COJOCARI, O., POPA, V., URSAKI, V. V. et al. Micrometer-size GaN Schottky-diodes for mm-wave frequency multipliers. In: Infrared and Millimeter Waves: Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 27 Sept.-1 Oct. 2004, Karlsruhe, Germany, 2004, pp. 317-318. ISBN 0-7803-8490-3.	en_US
dc.identifier.isbn	0-7803-8490-3
dc.identifier.uri	https://doi.org/10.1109/ICIMW.2004.1422084
dc.identifier.uri	http://repository.utm.md/handle/5014/10907
dc.description	Acces ful text: https://doi.org/10.1109/ICIMW.2004.1422084	en_US
dc.description.abstract	Small-size Pt/n-GaN Schottky diodes are fabricated using electrochemical technique for anode metallisation. Effects of surface passivation and thermal annealing on the interface quality are studied using PL-measurements and electrical characterisation. DC-characteristics of 5 /spl mu/m-diameter anodes result in a cut-off frequency of 390 GHz. The perspectives of GaN-diodes for THz-frequency multipliers are discussed.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	Schottky diodes	en_US
dc.subject	anode metallisation	en_US
dc.subject	diodes	en_US
dc.title	Micrometer-size GaN Schottky-diodes for mm-wave frequency multipliers	en_US
dc.type	Article	en_US