Articole din publicaţii internaţionale: Recent submissions

  • ENACHI, Mihai; SARUA, Andrei; STEVENS-KALCEFF, Marion; TIGINYANU, Ion; GHIMPU, Lidia; URSAKI, Veaceslav (IEEE, 2013)
    Matrices of titania nanotubes (TiO 2 NTs) have been prepared by anodization of Ti foils in ethylene glycol based electrolyte. These matrices were subjected to annealing at various temperatures or exposed to a focused laser ...
  • SERGENTU, V.; URSAKI, V. (Romanian Academy Publishing House, 2017)
    In this paper we propose a method for measuring the negative refraction index of films of optically transparent materials. The method is based on recording the direction of propagation and the shifting of the ray reflected ...
  • ROGACHEV, Alexander; SEMCHEMKO, A.; GAISHUN, V.; RUSU, Emil; URSAKI, Veacheslav; CURMEI, Nicolai; ZALAMAI, Victor (Romanian Academy Publishing House, 2017)
    In this paper we propose a method for measuring the negative refraction index of films of optically transparent materials. Morphological, optical and luminescence properties of rare earth doped ZnO layers prepared by a ...
  • SERGENTU, Vladimir; URSAKI, Veacheslav (Romanian Academy Publishing House, 2018)
    In this paper the Fresnel’s formula are generalized to the case of a twodimensional (2D) self-healing beam incident on the interface of the vacuum with a nonmagnetic, homogeneous on average and isotropic nanostructured ...
  • SERGENTU, Vladimir; URSAKI, Veacheslav; IOIŞER, Anatolii; ADAR, Eliezer (Romanian Academy Publishing House, 2018)
    In this paper a new concept of designing Fresnel lens concentrators on the basis of magnetic microwires with a complex spatial distribution of their density is proposed. The optical properties of microwires are analyzed ...
  • SERGENTU, Vladimir; URSAKI, Veacheslav; IOIŞER, Anatolii; ADAR, Eliezer (Romanian Academy Publishing House, 2019)
    An important component of Space-based solar power (SBSP) systems is the solar energy concentrator that collects solar power in space and focusses it on solar cells or heat engines to produce electricity, which is consequently ...
  • GEORGOBIANI, A. N.; URSAKI, V. V.; RADAUTSAN, S. I.; TIGINYANU, I. M. (ELSEVIER, 1985)
    Results of a study of near-band-edge absorption in both initial and annealed CdGa2S4 and CdIn2S4 single crystals at different temperatures are presented. Exciton-phonon interaction and cation disorder are shown to determine ...
  • URSAKI, V. V.; ICHIZLI, V. M.; TIGINYANU, I. M.; TERLETSKII, A. I.; CALUJA, Y. I.; RADAUTSAN, S. I. (IEEE, 1995)
    The activation efficiency of zinc impurity co-implanted with P/sup +/ ions in GaAs single crystals was studied by Raman scattering (RS) at phonon-plasmon coupled modes. P/sup +/ co-implantation has been found to result in ...
  • SYRBU, N. N.; TEZLEVAN, V. E.; GALBICH, I.; NEMERENCO, L. L.; URSAKI, V. V. (ELSEVIER, 2009)
    Photoluminescence and resonance Raman scattering spectra of CuGaS2 crystals are investigated at low temperature (10K) under the excitation with the radiation from a spectral interval obtained by passing the radiation of ...
  • STAMOV, I. G.; SYRBU, N. N.; URSAKI, V. V.; DOROGAN, A. V. (ELSEVIER, 2012)
    The fine structure of the Fabry–Perot interference as well as the interference of ordinary and extraordinary waves is investigated in ZnAs2 crystals. ε1, ε2, n and k optical constants are calculated in a wide spectral range ...
  • SYRBU, N. N.; STAMOV, I. G.; URSAKI, V. V.; PARVAN, V.; IVANENCO, Yu. (ELSEVIER, 2012)
    The anisotropy of the near-bandgap absorption is investigated in AgAsS2 crystals. The refraction indices, n and n respectively for the Ec and Ec polarizations as well as the spectral dependence of the refraction ...
  • STAMOV, I. G.; SYRBU, N. N.; URSAKI, V. V.; PARVAN, V. (ELSEVIER, 2012)
    Ground and excited states of three exciton series are observed in the region of fundamental absorption edge of AgAsS2 crystals. The contours of exciton reflection spectra are calculated and the main parameters of excitons ...
  • ZALAMAI, V. V.; STAMOV, I. G.; SYRBU, N. N.; URSAKI, V. V.; DOROGAN, V. (ELSEVIER, 2015)
    The excitons ground and excited states for Ea and Eb polarizations in absorption and reflection spectra of TlInS2 crystals were detected. The fundamental parameters of excitons and bands were determined at k=0. The ...
  • URSAKI, V. V.; TIGINYANU, I. M.; SYRBU, N. N.; ZALAMAI, V. V.; HUBBARD, S.; PAVLIDIS, D. (IOP Publishing, 2002)
    Sharp variations in optical reflectivity were observed when cooling and heating AlN/GaN heterostructures on sapphire substrates between room temperature and 10 K. The reflectivity was found to decrease at a definite ...
  • SÁNCHEZ, B.; MÉNDEZ, B.; PIQUERAS, J.; SIRBU, L.; TIGINYANU, I. M.; URSAKI, V. V. (Springer Nature Switzerland, 2008)
    Porous GaP layers doped with erbium or europium elements have been obtained by electrochemical etching and further impregnation processes. The thermal treatments for optical activation of rare earth (RE) ions lead to partial ...
  • SYRBU, N. N.; TIGINYANU, I. M.; URSAKI, V. V.; DOROGAN, A. V. (IOP Publishing, 2008)
    The change of polarization of the resonant Raman scattering lines is studied in CuGaxAl1−xS2 crystals with x equal to 1, 0.95 and 0.9 assuming resonance conditions with 4880 and 4765 Å Ar laser lines. Linear and circular ...
  • COLIBABA, G. V.; NEDEOGLO, D. D.; URSAKI, V. V. (ELSEVIER, 2011)
    The influence of sodium impurity on photoluminescence (PL) spectra of ZnSe crystals doped in a growth process from a Se+Na melt is investigated. It is shown that the introduction of the impurity results in emergence of ...
  • RICCI, P. C.; ANEDDA, A.; CORPINO, R.; CARBONARO, C. M.; MARCEDDU, M.; TIGINYANU, I. M.; URSAKI, V. V. (ELSEVIER, 2005)
    The Silver Gallium Sulfide (AgGaS2) ternary compound is a wide bandgap semiconductor (about 2.7eV) whose photoluminescence properties are characterized by excitons and donor–acceptor pairs recombinations. We have performed ...
  • SYRBU, N. N.; DOROGAN, V.; DOROGAN, A.; VIERU, T.; URSAKI, V. V.; ZALAMAI, V. V. (ELSEVIER, 2012)
    The transparency, reflection and luminescence spectra of In0.3Ga0.7As structures with 8nm thickness and quantum wells limited by the barrier layer GaAs of a 9nm (upper layer) and 100nm (bottom layer) thickness had been ...
  • ANEDDA, A.; SERPI, A.; MOLDOVYAN, N. A.; TIGINYANU, I. M.; URSAKI, V. V. (IOP Publishing, 1993)
    Results of a complex study of photoluminescence (PL), photoconductivity (PC) and photo-voltaic (PV) spectra in AgGa2.5In2.5S8 and CuGa2.5In2.5S8 single crystals are presented. The values of indirect (Egi=2.25 eV) and direct ...

Search DSpace


Browse

My Account