Articole din publicaţii internaţionale: Recent submissions

  • Observation of surface phonon mode in porous GaP 
    KARAVANSKII, V. A.; ANASTASSAKIS, Evangelos; RAPTIS, Y. S.; SOKOLOV, V. N.; TIGINYANU, I. M.; URSAKI, V. V. (Society of Photo-Optical Instrumentation Engineers, SPIE, 1996)
    Simple preparation technique of nanoporous semiconductors by anodization has opened new ways to form and investigate quantum and surface effects in nanosized objects. It has also allowed technologists to extend the range ...
  • Raman and electrical characterization of n-InP implanted by 630-keV nitrogen 
    TIGINYANU, I. M.; MIAO, J.; HARTNAGEL, H. L.; RUCK, D.; TINSCHERT, K.; URSAKI, V. V.; ICHIZLI, V. M. (IEEE, 1996)
    The goal of this work was to study the peculiarities of lattice disorder and conductivity compensation caused by N-implantation in liquid encapsulated Czochralski grown n-InP single crystals. The ion-induced damage of the ...
  • Zn/sup +//P/sup +/ and Zn/sup +//As/sup +/ co-implantation in InP single crystals 
    URSAKI, V. V.; TIGINYANU, I. M.; ICHIZLI, V. M.; TERLETSKY, A. I.; PYSHNAYA, N. B.; RADAUTSAN, S. I. (IEEE, 1996)
    The activation efficiency of zinc impurity co-implanted with P/sup +/ and As/sup +/ ions in InP was studied by Hall-effect measurements. Both P/sup +/ and As/sup +/ co-implantations followed by post-implantation annealing ...
  • Zn/sup +/, Zn/sup +//P/sup +/ and Zn/sup +//As/sup +/ implanted InP: study of electrical and symmetry properties 
    TIGINYANU, I. M.; KRAVETSKY, I. V.; URSAKI, V. V.; MAROWSKY, G.; HARTNAGEL, H. L. (IEEE, 1997)
    InP is known to be characterized by a low activation efficiency of p-type dopants. Some attempts have been previously undertaken to use the coimplantation of P/sup +/ ions in order to improve the activation efficiency of ...
  • Photoluminescence and Raman scattering in In0.53Ga0.47As/InP:Dy 
    PODOR, Balint; VIGNAUD, D.; TIGINYANU, I. M.; CSONTOS, L.; URSAKI, V. V.; SHONTYA, V. P. (Society of Photo-Optical Instrumentation Engineers, SPIE, 1997)
    High purity In0.53Ga0.47As grown on InP by liquid phase epitaxy with small amounts of rare earth dysprosium (Dy) in the melt was investigated. The presence of Dy dramatically reduced the charge carrier and residual donor ...
  • Raman and Hall-effect characterization of Zn/sup +//P/sup +/ co-implanted GaAs subjected to rapid thermal annealing 
    URSAKI, V. V.; TERLETSKY, A. I.; TIGINYANU, I. M. (IEEE, 1998)
    It is shown that Zn/sup +//P/sup +/ co-implantation in combination with rapid thermal annealing (RTA) allows one to obtain p-type GaAs layers with the peak hole concentration as high as 2.10/sup 19/ cm/sup -3/ and narrow ...
  • Spatial dispersion effects in the exciton-polariton reflectivity spectra of CuGaS/sub 2/ crystals 
    SYRBU, N.; URSAKI, V.; NYARI, T.; BLAJE, M.; PRUNIC, P.; TEZLEVAN, V. (IEEE, 2000)
    The analysis of the exciton reflectivity contour in CuGaS/sub 2/ crystals at 8 K was carried out. Absorption and luminescence spectroscopy was employed for additional characterization. The value of the exciton Ridberg ...
  • Photoluminescence study of /spl alpha/-ZnAl/sub 2/S/sub 4/ single crystals 
    URSAKI, V.; BOLDURESCU, V.; BURLAKOV, I.; SYRBU, N.; NYARI, T. (IEEE, 2000)
    Photoluminescence (PL) spectra of ZnAl/sub 2/S/sub 4/ crystals with spinel structure were studied under the extrinsic excitation. The PL bands at 0.98 eV and 1.34 eV are suggested to be caused by native defects; while the ...
  • Photoluminescence Study of Nitrogen-Related States in ZnSe 
    IVANOVA, Galina N.; NEDEOGLO, Dmitrii D.; NEDEOGLO, Natalia D.; RUSU, Emil V.; SIRKELI, Vadim P.; STRATAN, Gheorghe I.; URSAKI, Veacheslav V. (AIP Publishing LLC, 2007)
    Photoluminescence of N-doped ZnSe crystals is studied at temperatures between 10 and 300 K. Doping with N leads to the formation of simple N-based donor and acceptor defects, as well as associative N-based acceptors. The ...
  • Preparation and characterization of GaP colloidal nanoparticles and films 
    IACOB, M.; RUSU, Emil; PYSHKIN, S.; URSAKI, V.; GUTSUL, T.; BALLATO, John (Society of Photo-Optical Instrumentation Engineers, SPIE, 2012)
    In this communication, we present results of investigations of the influence of technological conditions upon the properties of GaP nanoparticles produced by using a new precursor as a source of Ga atoms. The obtained ...
  • Preparation and characterization of Ga2O3 and GaN nanoparticles 
    RUSU, E.; URSAKI, V.; RAEVSCHI, S.; VLAZAN, P. (Society of Photo-Optical Instrumentation Engineers, SPIE, 2015)
    In this communication, we present results on preparation of GaN nanoparticles by conversion of Ga2O3 nanocrystals in a flow of NH3 and H2. The monoclinic Ga2O3 nanoparticles have been prepared by hydrothermal method with ...
  • Nanostructures Obtained Using Electric Discharges at Atmospheric Pressure 
    TOPALA, P.; OJEGOV, A.; URSAKI, V. (Springer Nature Switzerland, 2016)
    The results of theoretical and experimental investigations of physical phenomena that accompany the formation of oxide and hydroxide nano-metric pellicles on metal surfaces by applying pulsed electrical discharge machining ...
  • Vibrational properties of CdGa2S4 at high pressure 
    GALLEGO-PARRA, S.; GOMIS, O.; VILAPLANA, R.; ORTIZ, H. M.; PÉREZ-GONZÁLEZ, E.; LUNA, R.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; URSAKI, V. V.; TIGINYANU, I. M.; MANJÓN, F. J. (AIP Publishing LLC, 2019)
    Raman scattering measurements have been performed in cadmium digallium sulphide (CdGa2S4) with defect chalcopyrite structure up to 25 GPa in order to study its pressure-induced phase transitions. These measurements have ...
  • Injection photodiodes based on metal oxide semiconductors 
    MORARI, Vadim; URSAKI, Veacheslav; RUSU, Emil; TIGINYANU, Ion (Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM, 2020)
    A brief review of our recent research on injection photodiodes based on metal oxide semiconductors deposited onto Si substrates is presented. A series of ZnSnO, NiO, and Zn1-xMgxO thin films are prepared by aerosol spray ...
  • Luminescence and Photoconductivity Caused by Antisite Defects in CdIn2S4 Single Crystals 
    GEORGOBIANI, A. N.; GRUZINTSEV, A. N.; RATSEEV, S. A.; TEZLEVAN, V. E.; TIGINYANU, I. M.; URSAKI, V. V. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 1986)
    Results of a study of the influence of nonstoichiometry as well as of annealing and argon ion implantation on photoluminescence and photoconductivity spectra of cadmium thioindate single crystals are presented. The energy ...
  • Non-Linear Raman Scattering in I-III2-VI4 Compounds 
    FOMIN, V. M.; TIGINYANU, I. M.; URSAKI, V. V. (IOP Publishing, 1993)
    The paper presents an experimental substantiation of the theory (based on the optical vibration anharmonism) of non-linear Raman scattering (RS) in defective II-III2-VI4 compounds. In the transparency region of those ...
  • Photoluminescence and conductivity compensation effects in fast-electron irradiated InP epilayers 
    RADAUTSAN, S. I.; TIGINYANU, I. M.; PYSHNAYA, N. B.; URSAKI, V. V. (Springer Nature Switzerland, 1994)
    Strong interaction between residual donor impurities and radiation defects was evidenced by studying the photoluminescence spectra of bound excitons in fast-electron (E=4 MeV) irradiated n-InP epilayers. A diminution of ...
  • Observation of 0.4 eV electron trap in electron-irradiated InP:Fe single crystals 
    TIGINYANU, I. M.; PYSHNAYA, N. B.; CALIN, M. V.; URSAKI, V. V. (IEEE, 1994)
    There has been increasing attention focused on the investigation of the /spl ap/0.4 eV electron trap in indium phosphide. According to G. Hirt et. al. (1993), the defect corresponding to that trap plays a major role in the ...
  • Raman scattering analysis of InGaAs/InP: effect of rare earth (dysprosium) addition during liquid phase epitaxial growth 
    TIGINYANU, I. M.; URSAKI, V. V.; PODOR, B.; CSONTOS, L.; SHONTYA, V. P. (IEEE, 1996)
    The authors present the results of Raman scattering investigation of the effect of the variation of the Dy doping level on the properties of InGaAs layers on InP, with the aim to elucidate the mechanisms of the effects of ...
  • Phase Transitions Induced by Hydrostatic Pressure in II-III2-VI4 Compounds 
    URSAKI, Veacheslav V.; BURLAKOV, Igor I.; TIGINYANU, Ivan M.; RAPTIS, Yannis S.; ANASTASSAKIS, Evangelos; ANEDDA, Alberto; CORPINO, Riccardo (IOP Publishing, 2000)
    II-III2-VI4 compounds with different crystal structures have been studied by Raman spectroscopy (RS) under hydrostatic pressure up to 30 GPa. The phase transition characteristics induced by hydrostatic pressure i.e. the ...

Search DSpace


Browse

My Account