Articole din publicaţii internaţionale: Recent submissions

  • Energy band structure and Frenkel excitons in PbGa2S4 
    STAMOV, I. G.; SYRBU, N. N.; URSAKI, V. V.; PARVAN, V. I.; ZALAMAI, V. V. (ELSEVIER, 2012)
    Optical reflection spectra are measured and calculated in PbGa2S4 crystals in the region of resonances related to excitons with large oscillator strength and binding energy (Frenkel excitons). The splitting of the upper ...
  • Er- and Eu-doped GaP-oxide porous composites for optoelectronic applications 
    SIRBU, L.; URSAKI, V. V.; TIGINYANU, I. M.; DOLGALEVA, Ksenia; BOYD, Robert W. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2007)
    We demonstrate the controlled preparation of Er- and Eu-doped GaP-oxide porous composites. The fabrication procedure entails the use of porous semiconductor templates and the impregnation of rare earth ions from a rare ...
  • Red and green nanocomposite phosphors prepared from porous GaAs templates 
    SYRBU, Lilian; URSAKI, V. V.; TIGINYANU, I. M.; DOLGALEVA, Ksenia; BOYD, Robert W. (IOP Publishing, 2007)
    Rare-earth-containing oxide nanocomposites are prepared in a controlled fashion from porous GaAs templates. The initial porous GaAs network is replaced by a β-Ga2O3 one during annealing at temperatures from 500 to 900 °C. ...
  • Large oscillator strength excitons in PbGa2S4 crystals 
    SYRBU, N. N.; PARVAN, V. I.; URSAKI, V. V. (ELSEVIER, 2012)
    Exciton states with a large oscillator strength (transverse–longitudinal splitting of 50meV) and binding energy of 290meV have been observed in PbGa2S4 crystals. The ground exciton states are stable up to the room temperature. ...
  • Body zero frequency modes in photonic crystals of nanopores and nanocylinders 
    SERGENTU, Vladimir; URSAKI, Veaceslav; SIRBU, Lilian (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2013)
    In this paper, we demonstrate that body zero frequency modes can exist at extremely low frequencies in a system of nanocylinders made of non-dissipative material. Such kind of modes is not specific to single nanocylinders, ...
  • Mechanical properties and Raman scattering investigation under indentation of CdGa2S4 and CdGa2Se4 
    SHIKIMAKA, O.; BURLACU, A.; GRABCO, D.; PARVAN, V.; PYRTSAC, C.; URSAKI, V. (IOP Publishing, 2016)
    The behavior of CdGa2S4 and CdGa2Se4 single crystalline semiconductors under Berkovich indentation of the (1 1 2) face in the load range of 10–700 mN has been investigated. Values of hardness and Young’s modulus have been ...
  • Improvement of InP crystalline perfection by He+-implantation and subsequent annealing 
    TIGINYANU, I. M.; TERLETSKY, A. I.; URSAKI, V. V. (ELSEVIER, 1995)
    The influence has been studied of 100-keV He+-ion implantation and subsequent thermal annealing on Raman scattering spectra of LEC-grown InP single crystals with (100)- and (111)-crystallographic orientations of the surface. ...
  • Polariton emission from CuGaSe2 crystals 
    SYRBU, N. N.; TIGINYANU, I. M.; URSAKI, V. V.; TEZLEVAN, V. E.; ZALAMAI, V. V.; NEMERENCO, L. L. (ELSEVIER, 2005)
    The value of longitudinal–transverse splitting ωLT equal to 2.5–2.8meV and the translation mass M=2.5m0 were determined for the A exciton as a result of investigation of the reflectivity and luminescence spectra of CuGaSe2 ...
  • Luminescence properties of a ZnO–In2O3 composite 
    URSAKI, V. V.; TIGINYANU, I. M.; BURLACU, A.; ZALAMAI, V.; JITARI, V. F. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2006)
    ZnO–In2O3 composite was prepared by thermal annealing of ZnIn2S4 crystals. Energy dispersive X-ray analysis demonstrated that annealing results in the formation of a composite consisting of ZnO and In2O3 phases with the ...
  • Wavelength modulated optical reflectivity spectra of CuAl1 -XGaXSe2crystals 
    SYRBU, N. N.; DOROGAN, A. V.; URSAKI, V. V.; MASNIK, A. (IOP Publishing, 2010)
    Exciton spectra of CuAl1 − XGaXSe2 solid solutions are investigated by wavelength modulated optical reflectivity at low temperatures (10 K). The energy position of n = 1 and 2 lines of the Γ4(A), Γ5(B) and Γ5(C) exciton ...
  • Birefringence of CuGaxAl1-xSe2 crystals 
    SYRBU, N. N.; DOROGAN, A. V.; MASNIK, A.; URSAKI, V. V. (IOP Publishing, 2011)
    Excitonic reflection spectra of CuAlSe2 crystals were studied at 10 K. The spectral dependences of refractive indices no and ne were calculated. The isotropic wavelength (the point of intersection of no and ne) in the ...
  • Raman scattering investigation of MnxFe1−xIn2S4 solid solutions 
    GUC, M.; URSAKI, V. V.; BODNAR, I. V.; LOZHKIN, D. V.; ARUSHANOV, E.; IZQUIERDO-ROCA, V.; PÉREZ RODRÍGUEZ, A. (ELSEVIER, 2012)
    Spinel-type MnxFe1−xIn2S4 solid solutions grown by the planar melt crystallization method (the horizontal version of the Bridgman method) are investigated by means of energy dispersive X-ray analysis and Raman scattering ...
  • Birefringence and excitonic spectra of TlGaS2 crystals 
    STAMOV, I. G.; SYRBU, N. N.; URSAKI, V. V.; ZALAMAI, V. V. (ELSEVIER, 1999)
    The anisotropy of transmission spectra was investigated in TlGaS2 crystals. An intensive transmission line was found in samples placed between two crossed polarizers. Ground and excited states of excitons were detected in ...
  • Luminescence and electrophysical characteristics of ZnSe implanted with acceptor impurities 
    GEORGOBIANI, A. N.; AMINOV, U. A.; DRAVIN, V. A.; LEPNEV, L. S.; MULLABAEV, I. D.; URSAKI, V. V.; ILJUKHINA, Z. P. (ELSEVIER, 1999)
    The investigation of traps and recombination centres in structures based on ZnSe single crystals by means of the deep level transient spectroscopy, photoluminescence and electroluminescence methods are presented. The ...
  • Random lasing in nanostructured ZnO produced from bulk ZnSe 
    URSAKI, V. V.; ZALAMAI, V. V.; BURLACU, A.; KLINGSHIRN, C.; MONAICO, E.; TIGINYANU, I. M. (IOP Publishing, 2009)
    We propose to produce three-dimensional ZnO random laser media on the basis of bulk ZnSe. Bulk ZnSe wafers are transformed into granular ZnO media by thermal treatment in oxygen ambient at temperatures in the range of ...
  • Birefringence of CuGa2S4 crystals 
    SYRBU, N.; DOROGAN, A.; URSAKI, V.; STAMOV, I.; TIGINYANU, I. M. (The Electrochemical Society, 2011)
    Investigation of the spectral characteristics as a function of the crystal thickness demonstrates that one can create filters using thin crystals for selecting several spectral lines. The wavelength of these lines is ...
  • The influence of isochronous annealing upon the near-band-edge photoluminescence spectra of the electron-irradiated n-InP 
    RADAUTSAN, S. I.; TIGINYANU, I. M.; URSAKI, V. V.; KORSHUNOV, F. P.; SOBOLEV, N. A.; KUDRYAVTSEVA, E. A. (ELSEVIER, 1993)
    The near-band-edge photoluminescence (PL) bands observed at 1.305 and 1.392 eV (T = 4.2 K) in electron-irradiated InP single crystals and epilayers have different behaviour with increasing temperature of isochronous ...
  • Guided mode lasing in ZnO nanorod structures 
    URSAKI, V. V.; ZALAMAI, V. V.; BURLACU, A.; FALLERT, J.; KLINGSHIRN, C.; KALT, H.; EMELCHENKO, G. A.; REDKIN, A. N.; GRUZINTSEV, A. N.; RUSU, E. V.; TIGINYANU, I. M. (ELSEVIER, 2009)
    Quasi-two-dimensional arrays of nearly parallel hexagonal ZnO nanorods and a three-dimensional cylindrical microstructure consisting of ZnO nanorods have been grown by low pressure chemical vapor deposition (CVD) and ...
  • Raman-active modes of porous gallium phosphide at high pressures and low temperatures 
    URSAKI, V. V.; MANJÓN, F. J.; SYASSEN, K.; TIGINYANU, I. M.; IRMER, G.; MONECKE, J. (IOP Publishing, 2002)
    Porous gallium phosphide (GaP) with a honeycomb-like morphology and a skeleton relative volume concentration c = 0.7 was investigated by Raman spectroscopy under pressure up to 10 GPa at T = 5 K. The porous samples were ...
  • Optical characterization of AlN/GaN heterostructures 
    URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; HUBBARD, S. M.; PAVLIDIS, D. (American Institute of Physics, 2003)
    AlN/GaN/sapphire heterostructures with AlN gate film thickness of 3–35 nm are characterized using photoreflectivity (PR) and photoluminescence (PL) spectroscopy. Under a critical AlN film thickness, the luminescence from ...

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