Morphology study and cathodoluminescence microanalysis of photoelectrochemically etched GaN epilayers

POPA, V.

dc.contributor.author	POPA, V.
dc.date.accessioned	2020-09-17T12:55:58Z
dc.date.available	2020-09-17T12:55:58Z
dc.date.issued	2005
dc.identifier.citation	POPA, V. Morphology study and cathodoluminescence microanalysis of photoelectrochemically etched GaN epilayers. In: Moldavian Journal of the Physical Sciences. 2005, vol. 4 (1), pp. 125-129. ISSN 1810-648X.	en_US
dc.identifier.issn	1810-648X
dc.identifier.uri	http://repository.utm.md/handle/5014/9553
dc.description.abstract	Photoelectrochemical etching of GaN in different solutions such as KOH, HF/H2O2/C2H5OH and oxalic acid was performed. The results of scanning electron microscopy cathodoluminescence analysis of the etched samples are presented.	en_US
dc.language.iso	en	en_US
dc.publisher	Academy of Sciences of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	photoelectrochemical etching	en_US
dc.subject	chemical reaction	en_US
dc.subject	gallium oxide formation	en_US
dc.subject	morphology	en_US
dc.title	Morphology study and cathodoluminescence microanalysis of photoelectrochemically etched GaN epilayers	en_US
dc.type	Article	en_US