Luminescence of porous semiconductor media covered with metallic films

POSTOLACHE, Vitalie

dc.contributor.author	POSTOLACHE, Vitalie
dc.date.accessioned	2020-09-16T09:52:44Z
dc.date.available	2020-09-16T09:52:44Z
dc.date.issued	2016
dc.identifier.citation	POSTOLACHE, Vitalie. Luminescence of porous semiconductor media covered with metallic films. In: Moldavian Journal of the Physical Sciences, issue dedicated to the memory of academician Sergiu Radautsan (1926-1998). 2016, vol. 15 (3-4), pp. 176-183. ISSN 1810-648X.	en_US
dc.identifier.issn	1810-648X
dc.identifier.uri	http://repository.utm.md/handle/5014/9494
dc.description.abstract	Porous GaP and InP layers with a pore diameter and a skeleton wall thickness of about 50 nm are prepared on bulk substrates by anodization; microgranular ZnO structures are produced by thermal treatment of ZnTe single crystals in this work. The effect of coating in the prepared samples with thin Au, Cu, Ag and ITO films on their luminescence is investigated; the hole pairsresults are discussed in terms of increased energy transfer between the excited electron and surface plasmons where the surface plasmon resonance matches the energy of photoluminescence bands.	en_US
dc.language.iso	en	en_US
dc.publisher	Academy of Sciences of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	semiconductors	en_US
dc.subject	metal films	en_US
dc.subject	metallic nanostructures	en_US
dc.subject	photoluminescence bands	en_US
dc.title	Luminescence of porous semiconductor media covered with metallic films	en_US
dc.type	Article	en_US