The oxide layers deposition on III – V semiconductor nanoporous materials

DIKUSAR, A.; SIMASHKEVICH, A.; SHERBAN, D.; MONAICO, E.; BRUK, L.; USATII, Yu.; TIGINYANU, I.

dc.contributor.author	DIKUSAR, A.
dc.contributor.author	SIMASHKEVICH, A.
dc.contributor.author	SHERBAN, D.
dc.contributor.author	MONAICO, E.
dc.contributor.author	BRUK, L.
dc.contributor.author	USATII, Yu.
dc.contributor.author	TIGINYANU, I.
dc.date.accessioned	2020-09-09T12:30:47Z
dc.date.available	2020-09-09T12:30:47Z
dc.date.issued	2006
dc.identifier.citation	DIKUSAR, A., SIMASHKEVICH, A., SHERBAN, D. et al. The oxide layers deposition on III – V semiconductor nanoporous materials. In: Materials Science and Condensed Matter Physics : proc. of the 3h intern. conf. Oct. 3-6, 2006, Chişinău, 2006, p. 179.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/9331
dc.description	Sursa: Conferința – "International Conference on Materials Science and Condensed Matter Physics", 3-th Edition, Chişinău, Moldova, 3-6 octombrie 2006.→ https://ibn.idsi.md/collection_view/262	en_US
dc.description.abstract	The peculiarities of the deposition process in dependence of the porous layer thickness were investigated. The porous layers of III-V semiconductor n-InP have been obtained by the anodic dissolution in 5% HCl. The diameter of pores reaches of about 80 – 100 nm and degree of porosity ~ 55 – 60%. The porous layers thickness was changed from 2 μm to ~ 40 μm. The chemical composition of the obtained structures were investigated in dependence on the thickness of the porous layer (5-40 μm) on the surface of InP crystals with the aid of SEM and determination of elements distribution by Tescan Oxford Instruments INCA Energy EDX.	en_US
dc.language.iso	en	en_US
dc.publisher	Institutul de Fizică Aplicată, AŞM	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	semiconductors	en_US
dc.subject	nanoporous materials	en_US
dc.subject	crystals	en_US
dc.title	The oxide layers deposition on III – V semiconductor nanoporous materials	en_US
dc.type	Article	en_US