The oxide layers deposition on III – V semiconductor nanoporous materials

Abstract

The peculiarities of the deposition process in dependence of the porous layer thickness were investigated. The porous layers of III-V semiconductor n-InP have been obtained by the anodic dissolution in 5% HCl. The diameter of pores reaches of about 80 – 100 nm and degree of porosity ~ 55 – 60%. The porous layers thickness was changed from 2 μm to ~ 40 μm. The chemical composition of the obtained structures were investigated in dependence on the thickness of the porous layer (5-40 μm) on the surface of InP crystals with the aid of SEM and determination of elements distribution by Tescan Oxford Instruments INCA Energy EDX.