Quantum wells parameters of In0,3Ga0,7As/GaAs VCSEL lasers

DOROGAN, A.; DOROGAN, V.; MEREUTA, A.; SYRBU, A.; SYRBU, N.; VIERU, T.; URSAKI, V.; ZALAMAI, V.

Quantum wells parameters of In0,3Ga0,7As/GaAs VCSEL lasers

DOROGAN, A.; DOROGAN, V.; MEREUTA, A.; SYRBU, A.; SYRBU, N.; VIERU, T.; URSAKI, V.; ZALAMAI, V.

URI: http://repository.utm.md/handle/5014/9296

Date: 2012

Abstract:

Injection lasers based on quantum well (QW) and quantum dots (QD) heterostructures with a low value of threshold current density Jth with continuous emission regime and output power value of 3W have been manufactured. VCSEL lasers based on In0,3Ga0,7As/GaAs nanostructures are used in different optoelectronic systems and fiber optic communications systems.

Description:

Sursa: Conferința –"Materials Science and Condensed Matter Physics", Chișinău, Moldova, 11-14 septembrie 2012.→ https://ibn.idsi.md/collection_view/483

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