Synthesis and optical properties of Ga2O3 nanowires grown on GaS substrate

LEONTIE, Liviu; SPRINCEAN, Veaceslav; UNTILA, Dumitru; SPALATU, Nicolae; CARAMAN, Iuliana; COJOCARU, Ala; ŞUŞU, Oana; LUPAN, Oleg; EVTODIEV, Igor; VATAVU, Elmira; TIGINYANU, Ion; CARLESCU, Aurelian; CARAMAN, Mihail

Synthesis and optical properties of Ga2O3 nanowires grown on GaS substrate

LEONTIE, Liviu; SPRINCEAN, Veaceslav; UNTILA, Dumitru; SPALATU, Nicolae; CARAMAN, Iuliana; COJOCARU, Ala; ŞUŞU, Oana; LUPAN, Oleg; EVTODIEV, Igor; VATAVU, Elmira; TIGINYANU, Ion; CARLESCU, Aurelian; CARAMAN, Mihail

URI: https://doi.org/10.1016/j.tsf.2019.137502
http://repository.utm.md/handle/5014/9111

Date: 2019

Abstract:

Gallium oxide (β-Ga2O3) nanowires were synthesized by heat treatment of single crystal β-GaS plates in air. Crystal structure and composition of synthesized materials were studied by X-ray diffraction, energy dispersive X-ray spectroscopy and Raman spectroscopy. Thermal treatment of β-GaS plates at 1023K leads to the formation of a Ga2O3 (native oxide) layer on β-GaS (0001) surface of plates. Layer thickness and size of Ga2O3 wires contained were found to depend on temperature and duration of applied heat treatment. For 1023K and 6h, the length of Ga2O3 wires laid in the range from units to tens of nanometers, while for 1123K and 30min, between 30 and 40μm.