Articole din publicaţii internaţionale: Recent submissions

  • A programmable metallization cell based on Ag-As2S3 
    STRATAN, I.; TSIULYANU, D.; EISELE, I. (National Institute of Optoelectronics, Romania, 2006)
    The switching properties of a Programmable Metallization Cell (PMC) structure based on the Ag-As2S3 solid electrolyte were investigated. It was found that at 120 mV of forward bias voltage the device switches from an off ...
  • A new propylamine sensor using artificial dimorphite 
    TSIULYANU, D.; MARIAN, S.; GUBA, M.; POTJE-KAMLOTH, K.; LIESS, H.-D. (IEEE, 1998)
    The sandwich metal-dimorphite(As/sub 4/S/sub 3/)-metal structure is used as a sensor for detection of propylamine (P/sub r/NH/sub 2/) vapor. The gas induced shifts of the current-voltage characteristics as well as transient ...
  • WID: a new Schottky-structure design for THz-applications 
    COJOCARI, O.; SYDLO, C.; HARTNAGEL, H.-L. (IEEE, 2005)
    Whisker integrated diode (WID) is a fully vertical Schottky-based structure suitable for hybrid integration in THz-systems. This paper presents design, simulation and DC-measurement results of a WID for THz-mixing application.
  • THz Schottky diodes on epitaxial AlGaAs-membrane 
    COJOCARI, O.; OPREA, I.; SYDLO, C.; ZIMMERMANN, R.; WALBER, A.; HENNEBERGER, R.; HARTNAGEL, H.-L. (IEEE, 2005)
    Schottky structures based on quasi-vertical diode (QVD) design concept are essentially improved by optimization of the GaAs/AlGaAs wafer layout and fabrication process. Insertion of a 4 mum-thin epitaxial AlGaAs layer ...
  • THz Electronics 
    FEIGINOV, Michael; GONZALO, Ramón; MAESTROJUÁN, Itziar; COJOCARI, Oleg; HOEFLE, Matthias; LIMITI, Ernesto (John Wiley & Sons, Ltd, 2005)
    Summary Several key topics in THz electronics are discussed. We describe the operating principles, limitations, and state-of-the-art of resonant-tunnelling diodes (RTDs) and THz RTD oscillators. Furthermore, THz fundamental ...
  • THz Autocorrelators for ps Pulse Characterization Based on Schottky Diodes and Rectifying Field-Effect Transistors 
    PREU, Sascha; MITTENDORFF, Martin; WINNERL, Stephan; COJOCARI, Oleg; PENIRSCHKE, Andreas (IEEE, 2015)
    When operating Schottky diodes and rectifying field-effect transistors in the saturation regime, where they show a sublinear response to incident THz power, they can be used as fast autorcorrelators yielding information ...
  • The impact of process optimization on planar THz-Schottky device reliability 
    MOTTET, B.; SYDLO, C.; KOGEL, B.; ROBILLARD DE, Q.; COJOCARI, O.; HARTNAGEL, H. L. (IEEE, 2004)
    The technological complexity as well as space-application quality standards require sophisticated process control and optimization for reliability improvement of planar THz-Schottky devices. Degradation mechanisms are ...
  • Technology of Wide-Bandgap Diode Structures for Highfrequency Operation 
    MUTAMBA, K.; YILMAZOGLU, O.; COJOCARI, O.; SYDLO, C.; PAVLIDIS, D.; HARTNAGEL, H. L. (IEEE, 2006)
    This paper reports on technology development aspects for GaN-based diodes in view of their application at high frequencies. The investigated devices include structures for transferred electron effects for operation at high ...
  • SubMM-wave multipliers by film-diode technology 
    COJOCARI, Oleg; OPREA, Ion; GIBSON, Hugh; WALBER, Achim (IEEE, 2016)
    A series of THz-MIC-s were successfully fabricated by a so-called Film-Diode process. Sub-millimeter-wave multipliers based on these MIC-s were tested with excellent results. Peak measured output power of these multipliers ...
  • Schottky Diode Detectors for Monitoring Coherent THz Synchrotron Radiation Pulses 
    SEMENOV, A.; HÜBERS, H.-W.; POHL, A.; COJOCARI, O.; SOBORNYTSKYY, M.; HOEHL, A.; MÜLLER, R.; RIES, M.; WÜSTEFELD, G. (JACoW Publishing, Geneva, Switzerland, 2014)
    Coherent synchrotron radiation (CSR) in the terahertz frequency range is a powerful tool for the diagnostics of the electron-beam relying on the fact that the emission spectrum of THz CSR depends on the shape of the electron ...
  • RTD-based THz-MIC by Film-Diode technology 
    COJOCARI, Oleg; SYDLO, Cezary; FEIGINOV, Michael; MEISSNER, Peter (IEEE, 2012)
    This work aims at development of extremely compact and low-cost THz sources. Resonant-tunneling diode (RTD) is monolithically integrated with planar resonator and Vivaldi antenna on transferred membrane-substrate by ...
  • Resonant-tunnelling-diode oscillators operating at frequencies above 1.1 THz 
    FEIGINOV, Michael; SYDLO, Cezary; COJOCARI, Oleg; MEISSNER, Peter (American Institute of Physics, 2011)
    We present resonant-tunnelling-diode (RTD) oscillators operating at the fundamental frequency of 1111 GHz. We show that our RTDs and RTD oscillators have much room for further improvement of their parameters and for further ...
  • Resonant-tunnelling diodes for THz applications 
    FEIGINOV, Michael; SYDLO, Cezary; COJOCARI, Oleg; MEISSNER, Peter (Society of Photo-Optical Instrumentation Engineers, SPIE, 2012)
    We investigate experimentally resonant-tunnelling-diode (RTD) oscillators, which are based on RTDs with heavily doped collector. We demonstrate that such RTD oscillators can work at frequencies, which are far beyond the ...
  • Quasi-Optical Schottky Barrier Diode Detector for mmWave/sub-THz Wireless Communication 
    MUHSIN, Ali; GUZMAN, Robinson Cruzoe; RIVERA-LAVADO, Alejandro; COJOCARI, Oleg; GARCIA-MUFIOZ, Luis Enrique; CARPINTERO, Guillermo (IEEE, 2018)
    We report on the development of a compact quasioptical zero-bias Schottky barrier diode (QO-SBD) envelope detector for mmWave/sub-THz frequencies. The detector consists of a Schottky diode mounted on a self-complementary ...
  • Quasi-Optic Transmitter and Receiver Modules Enabling Next-Generation Ultra-Broadband Wireless Links at Carrier-Wave Frequencies Ranging from 60 to 180 GHz 
    MUHSIN, Ali; GUZMÁN, Robinson Cruzoe; COJOCARI, Oleg; NELLEN, Simon; SANTAMARÍA, Gabriel; GARCÍA-MUÑOZ, Luis Enrique; SEGOVIA-VARGAS, Daniel; GLOBISCH, Björn; CARPINTERO, Guillermo (Springer Nature Switzerland, 2019)
    A wireless link using quasi-optic transmitter and receiver modules is demonstrated, enabling carrier wave frequency selection within various millimeter-wave bands from E-band to D-band without changing the modules. The ...
  • Quasi optical Schottky diode detectors for fast ultra-wideband detection 
    SOBORNYTSKYY, N.; LISAUSKAS, A.; WEICKHMANN, C.; JAKOBI, R.; SEMENOV, A.; HÜBERS, H.; MÜLLER, R.; HOEHL, A.; COJOCARI, O. (IEEE, 2013)
    We present ultra-wideband zero-bias Schottky diode detector modules with monolithically integrated log-spiral antenna. Detectors exhibit a broad-band response with a stronger roll-off above 800 GHz and the minimum ...
  • Quasi optical Schottky diode detectors for fast ultra-wideband detection 
    COJOCARI, O.; SOBORNYTSKYY, N.; WEICKHMANN, C.; JAKOBY, R.; SEMENOV, A.; HÜBERS, H.; MÜLLER, R.; HOEHL, A. (IEEE, 2016)
    We present ultra-wideband zero-bias Schottky diode detector modules with monolithically integrated log-spiral antenna. Detectors exhibit a broad-band response with a stronger roll-off above 800 GHz and the minimum ...
  • Process Control and Failure Analysis Implementation for THz Schottky-based components 
    ICHIZLI, V.; RODRÍGUEZ-GIRONÉS, M.; MARCHAND, L.; GARDEN, C.; COJOCARI, O.; MOTTET, B.; HARTNAGEL, H. L. (Elsevier, 2002)
    Schottky diodes and integrated circuits are most used devices for both frequency mixing and multiplying in THz range. Higher operational frequencies require of the devise dimensions. Devise dimensions in THz range are often ...
  • Optical mixing in THz Schottky diodes 
    SCHOENHERR, D.; COJOCARI, O.; SYDLO, C.; GOEBEL, T.; FEIGINOV, M.; HARTNAGEL, H. L.; MEISSNER, P. (IEEE, 2008)
    This paper presents the effect of optical mixing in zero-bias InGaAs Schottky detectors at THz frequencies. The excitation of ultrafast carriers by illumination with two 1.5 mum laser beams is verified. This proves the ...
  • Operation of resonant-tunnelling-diode oscillators beyond tunnel-lifetime limit at 564 GHz 
    FEIGINOV, M.; SYDLO, C.; COJOCARI, O.; MEISSNER, P. (IOP Publishing, 2012)
    We present resonant-tunnelling-diode (RTD) oscillators, which are operating at frequencies up to 564 GHz. Due to heavy doping of the collector side of our diodes, the oscillators are operating beyond the tunnel-lifetime ...

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