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Обеспечение качества услуг в сфере телекоммуникаций
ПАВЛОВА, Татьяна
(
Departamentul Editorial-Poligrafic al ASEM
,
2009
)
Temperature dependence of the optical gap CuGa5Se8
NATEPROV, A.
;
LEVCENCO, S.
;
SYRBU, N. N.
(
Institutul de Fizică Aplicată, AŞM
,
2006
)
Measurement of a Conductor Cross Sectional Area
DIMITRAKI, N. S.
;
DIMITRAKI, S. N.
(
Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau, Republic of Moldova
,
2008
)
Surface-charge lithography for GaN microstructuring based on photoelectrochemical etching techniques
TIGINYANU, I. M.
;
POPA, V.
;
VOLCIUC, O.
(
American Institute of Physics
,
2005
)
The impact of morphology upon the radiation hardness of ZnO layers
BURLACU, A.
;
URSAKI, V. V.
;
SKURATOV, V. A.
;
LINCOT, D.
;
PAUPORTE, T.
;
ELBELGHITI, H.
;
RUSU, E. V.
;
TIGINYANU, I. M.
(
IOP Publishing
,
2008
)
Nanostructuring induced enhancement of radiation hardness in GaN epilayers
URSAKI, V. V.
;
TIGINYANU, I. M.
;
VOLCIUC, O.
;
POPA, V.
;
SKURATOV, V. A.
;
MORKOÇ, H.
(
American Institute of Physics
,
2007
)
Prediction of negative index material lenses based on metallo-dielectric nanotubes
SERGENTU, V. V.
;
TIGINYANU, I. M.
;
URSAKI, V. V.
;
ENACHI, M.
;
ALBU, S. P.
;
SCHMUKI, P.
(
WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
,
2008
)
Electrochemical pore etching in Ge
LANGA, S.
;
CHRISTOPHERSEN, M.
;
CARSTENSEN, J.
;
TIGINYANU, I. M.
;
FÖLL, H.
(
WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
,
2003
)
Raman scattering study of pressure-induced phase transitions in AIIB2IIIC4VI defect chalcopyrites and spinels
TIGINYANU, I. M.
;
URSAKI, V. V.
;
MANJÓN, F. J.
;
TEZLEVAN, V. E.
(
ELSEVIER
,
2003
)
Fabrication of GaN nanowalls and nanowires using surface charge lithography
POPA, Veaceslav
;
TIGINYANU, Ion
;
VOLCIUC, Olesea
;
SARUA, Andrei
;
KUBALL, Martin
;
HEARD, Peter
(
ELSEVIER
,
2008
)
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TIGINYANU, I. M. (112)
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ZALAMAI, V. V. (19)
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crystals (55)
semiconductors (45)
films (30)
luminescence (24)
photoluminescence (23)
nanorods (21)
sensors (20)
pores (19)
thin films (19)
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