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Browsing Articole din publicaţii internaţionale by Subject "defect chalcopyrites"

Browsing Articole din publicaţii internaţionale by Subject "defect chalcopyrites"

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  • Effects of the Cations on the Raman Spectra of Sulphur Defect Chalcopyrites 
    TIGINYANU, I. M.; LOTTICI, P. P.; RAZZETTI, C.; GENNARI, S. (IOP Publishing, 1993)
    We report the Raman spectrum of defect chalcopyrite compounds CdAl2S4, CdGa2S4, ZnGa2S4 and of the isostructural mixed compounds Zn0.7Cd0.3Al2S4, ZnGa0.2Al1.8S4 and ZnGa0.8Al1.2S4. The role of the cations on the vibrational ...
  • HgGa2Se4 under high pressure: An optical absorption study 
    GOMIS, O.; VILAPLANA, R.; MANJÓN, F. J.; RUIZ-FUERTES, J.; PÉREZ-GONZÁLEZ, E.; LÓPEZ-SOLANO, J.; BANDIELLO, E.; ERRANDONEA, D.; SEGURA, A.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; URSAKI, V. V.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2015)
    High-pressure optical absorption measurements have been performed in defect chalcopyrite HgGa2Se4 to investigate the influence of pressure on the bandgap energy and its relation with the pressure-induced order–disorder ...
  • High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds 
    GOMIS, O.; VILAPLANA, R.; MANJÓN, F. J.; PÉREZ-GONZÁLEZ, E.; LÓPEZ-SOLANO, J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ERRANDONEA, D.; RUIZ-FUERTES, J.; SEGURA, A.; SANTAMARÍA-PÉREZ, D.; TIGINYANU, I. M.; URSAKI, V. V. (American Institute of Physics, 2012)
    High-pressure optical absorption and Raman scattering measurements have been performed in defect chalcopyrite (DC) CdGa2Se4 up to 22 GPa during two pressure cycles to investigate the pressure-induced order-disorder phase ...
  • High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4 
    VILAPLANA, R.; GOMIS, O.; PÉREZ-GONZÁLEZ, E.; ORTIZ, H. M.; MANJÓN, F. J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ALONSO-GUTIÉRREZ, P.; SANJUÁN, M. L.; URSAKI, V. V.; TIGINYANU, I. M. (AIP Publishing LLC, 2013)
    High-pressure Raman scattering measurements have been carried out in ZnGa2Se4 for both tetragonal defect chalcopyrite and defect stannite structures. Experimental results have been compared with theoretical lattice dynamics ...
  • Nonlinear pressure dependence of the direct band gap in adamantine ordered-vacancy compounds 
    MANJÓN, F. J.; GOMIS, O.; RODRÍGUEZ-HERNÁNDEZ, P.; PÉREZ-GONZÁLEZ, E.; MUÑOZ, A.; ERRANDONEA, D.; RUIZ-FUERTES, J.; SEGURA, A.; FUENTES-CABRERA, M.; TIGINYANU, I. M.; URSAKI, V. V. (American Physical Society, 2010)
    A strong nonlinear pressure dependence of the optical absorption edge has been measured in defect chalcopyrites CdGa2Se4 and HgGa2Se4. The behavior is due to the nonlinear pressure dependence of the direct band-gap energy ...
  • Phase transitions in defect chalcopyrite compounds under hydrostatic pressure 
    URSAKI, V. V.; BURLAKOV, I. I.; TIGINYANU, I. M.; RAPTIS, Y. S.; ANASTASSAKIS, E.; ANEDDA, A. (American Physical Society, 1999)
    Tetrahedrally bonded AGa2X4(A=Cd, Zn; X=S, Se) compounds crystallizing in defect chalcopyrite and defect famatinite structures have been studied by Raman spectroscopy under hydrostatic pressure. The pressure-induced changes ...
  • Structural and Vibrational Properties of CdAl2S4 under High Pressure: Experimental and Theoretical Approach 
    SANS, Juan Ángel; SANTAMARÍA-PÉREZ, David; POPESCU, Catalin; GOMIS, Oscar; MANJÓN, Francisco Javier; VILAPLANA, Rosario; MUÑOZ, Alfonso; RODRÍGUEZ-HERNÁNDEZ, Plácida; URSAKI, Veaceslav V.; TIGINYANU, Ion M (American Chemical Society, 2014)
    The behavior of defect chalcopyrite CdAl2S4 at high pressures and ambient temperature has been investigated in a joint experimental and theoretical study. High-pressure X-ray diffraction and Raman scattering measurements ...
  • Thermally activated cation ordering in ZnGa2Se4single crystals studied by Raman scattering, optical absorption, andab initiocalculations 
    VILAPLANA, R.; GOMIS, O.; PEREZ-GONZÁLEZ, E.; ORTIZ, H. M.; MANJÓN, F. J.; RODRIGUEZ-HERNANDEZ, P.; MUŇOZ, A.; ALONSO-GUTIÉRREZ, P.; SANJUÁN, M. L.; URSAKI, V. V.; TIGINYANU, I. M. (IOP Publishing, 2013)
    Order–disorder phase transitions induced by thermal annealing have been studied in the ordered-vacancy compound ZnGa2Se4 by means of Raman scattering and optical absorption measurements. The partially disordered as-grown ...
  • Vibrational properties of CdGa2S4 at high pressure 
    GALLEGO-PARRA, S.; GOMIS, O.; VILAPLANA, R.; ORTIZ, H. M.; PÉREZ-GONZÁLEZ, E.; LUNA, R.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; URSAKI, V. V.; TIGINYANU, I. M.; MANJÓN, F. J. (AIP Publishing LLC, 2019)
    Raman scattering measurements have been performed in cadmium digallium sulphide (CdGa2S4) with defect chalcopyrite structure up to 25 GPa in order to study its pressure-induced phase transitions. These measurements have ...
  • Vibrational study of HgGa2S4 under high pressure 
    VILAPLANA, R.; ROBLEDILLO, M.; GOMIS, O.; SANS, J. A.; MANJÓN, F. J.; PÉREZ-GONZÁLEZ, E.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; TIGINYANU, I. M.; URSAKI, V. V. (American Institute of Physics, 2013)
    In this work, we report on high-pressure Raman scattering measurements in mercury digallium sulfide (HgGa2S4) with defect chalcopyrite structure that have been complemented with lattice dynamics ab initio calculations. Our ...

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