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Browsing Articole din publicaţii internaţionale by Author "NIKOLAEVA, A. A."

Browsing Articole din publicaţii internaţionale by Author "NIKOLAEVA, A. A."

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  • Bi-Sb layers and wires for magneto- thermoelectric applications 
    NIKOLAEVA, A. A.; KONOPKO, L. A.; BODIUL, P. P.; POPOV, I. A.; MOLOSNIK, E. F.; RASTEGAEV, G. M. (Institutul de Fizică Aplicată, AŞM, 2018)
    This study is aimed at increasing the thermoelectric figure of merit ZT to maximize the power factor and minimize the thermal conductivity. In this paper, we present the results of measurements of transport effects in ...
  • Features of display the quantum dimensional effects in cylindrical semimetal bismuth antimony nanowires 
    NIKOLAEVA, A. A.; KONOPKO, L. A.; GHERGHISHAN, I.; POPOV, I. A.; PARA, Gh. I.; KOBYLIANSKAYA, A. K. (Academia de Ştiinţe a Moldovei, 2019)
    We have developed the method of preparation of the single- crystalline semimetallic bismuth antimony nano- and microwires in glass cover with diameter from 50 nm to 1000 nm, and orientation along the wire axis [1011], using ...
  • Peculiarities of diffusion thermopower with impurity electron topological transition in heavily doped bismuth wires 
    NIKOLAEVA, A. A.; KONOPKO, L. A.; BODIUL, P. P.; TSURKAN, A. K. (Институт термоэлектричества Национальной академии наук и Министерства образования и науки Украины, 2014)
    This paper presents a series of investigations of differential thermopower and resistance in the temperature range of 4.2 – 300 K of samples shaped as glass-coated single-crystal Bi wires heavily doped with Sn acceptor ...
  • Peculiarities of phonon drag effect in bismuth wires 
    KONOPKO, L. A.; NIKOLAEVA, A. A.; PARA, Gh. I.; BOTNARI, O. V. (Institutul de Fizică Aplicată, 2012)
    Low dimensional materials, such as nanowires, have attracted substantial attention in theoretical and experimental studies. In work predicts an enhancement of the thermoelectric power for nanowires.
  • Size-Quantization Semimetal–Semiconductor Transitionin Bi0.98Sb0.02 Nanowires: Thermoelectric Properties 
    NIKOLAEVA, A. A.; KONOPKO, L. A.; HUBER, T. E.; BODIUL, P. P.; POPOV, I. A.; MOLOSHNIK, E. F. (Springer Nature Switzerland, 2012)
    We fabricated Bi0.98Sb0.02 wires with diameters in the range between 200 nm and 2 μm and studied their electronic transport and thermoelectric properties. Rotational diagrams and strong Shubnikov–de Haas oscillations show ...
  • The structure phase transition in quantum wires of bismuth under elastic tension 
    BODIUL, P. P.; GARABAZHIU, V. F.; CONDREA, E. P.; NIKOLAEVA, A. A. (Springer Nature Switzerland, 1996)
    It was established that at 4.2 K for thin (d<1μm)Bi wires there existed a complicated λ-form dependence of the resistanceR¯ on the strong elastic deformation ξ. The drastic fall in the oscillation amplitude of the ...
  • Thermoelectric Properties and Surface States in the Layers of Bi2Te3 Topological Insulators 
    NIKOLAEVA, A. A.; KONOPKO, L. A.; ROGATSKII, K.; BODYUL, P. P.; GHERGISHAN, I. (Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau, Republic of Moldova, 2018)
    The thermoelectric properties and Shubnikov-de Haas (SdH) oscillations of monocrystalline layers of a topological insulator (ТI) of n-type bismuth telluride were investigated. The monocrystalline Bi2Te3 layers were fabricated ...
  • Thickness Dependences of Kinetic Properties of Quantum Wires of Pure and Doped Bismuth 
    BODIUL, P. P.; BURCHAKOV, A. N.; GITSU, D. V .; NIKOLAEVA, A. A. (Springer Nature Switzerland, 1999)
    Last time a great number of researches is devoted to the investigation of quantum and classical size effects [1]. The problem is stimulated by the possibility to detect new effects having no analogues in bulk crystal and ...
  • Topological insulator Bi2Te3 layers, transport and thermoelectric properties 
    NIKOLAEVA, A. A.; KONOPKO, L. A.; ROGACKI, K.; RUSU, A.; GRITSKO, R. (Institutul de Fizică Aplicată, 2016)
    We have investigated thermoelectric properties and Shubnikov de Haas (SdH) oscillations in topological insulator (TI) Bi2Te3 layers. TI are electronic materials that have a bulk band gap like an ordinary insulator but have ...

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