IRTUM – Institutional Repository of the Technical University of Moldova

Browsing Articole din publicaţii internaţionale by Author "NEUMANN, H."

Browsing Articole din publicaţii internaţionale by Author "NEUMANN, H."

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  • The fundamental absorption edge of PbGa2S4 
    NEUMANN, H.; HÖRIG, W.; NOOKE, G.; SYRBU, N. N. (Elservier, 1988)
    Optical absorption spectra of PbGa2S4 are measured in the photon energy range from 2.0 to 3.2 eV and for temperatures between 32 and 300 K. PbGa2S4 is found to be an indirect-gap semiconductor with a gap energy of 2.84 eV ...
  • GaN nucleation on (0 0 0 1)-sapphire via ion-induced nitridation of gallium 
    SIDORENKO, A.; PEISERT, H.; NEUMANN, H.; CHASSÉ, T. (ELSEVIER, 2006)
    The growth of epitaxial GaN films on (0001)-sapphire has been investigated using X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED). In order to investigate the mechanism of the growth in ...
  • GaN nucleation on 6H-SiC(0 0 0 1)-(√3×√3)R30°:Ga and c-sapphire via ion-induced nitridation of gallium: Wetting layers 
    SIDORENKO, A.; PEISERT, H.; NEUMANN, H.; CHASSE, T. (Elsevier, 2007)
    We present X-ray Photoemission (XPS) and low energy electron diffraction (LEED) investigations of initial stages of GaN film growth on sapphire(0001) and SiC(0001)-√3×√3:Ga. The growth of ultrathin films is performed by ...
  • Influence of preparation parameters for low-energy ion beam nitridation of III–V semiconductor surfaces 
    HECHT, J.-D.; FROST, F.; SIDORENKO, A.; HIRSCH, D.; NEUMANN, H.; SCHINDLER, A.; KRASNIKOW, S.; ZHANG, L.; CHASSÉ, T. (Elservier, 2003)
    The nitridation of InAs, InP, and InSb by low-energy N2+ ion bombardment at different preparation parameters was studied by near-edge X-ray absorption fine structure, photoemission spectroscopy (PES), and resonant PES ...
  • Infrared lattice vibration spectra of monoclinic ZnP2 
    SOBOTTA, H.; NEUMANN, H.; SYRBU, N. N.; RIEDE, V. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 1983)
    The lattice vibrational properties of ZnP2 which is known to crystallize in a monoclinic and tetragonal modification with space groups P21/c and one of the enantiomorphs P41212 or P43212 respectively /1/, have been studied ...
  • Infrared lattice vibration spectra of tetragonal ZnP2 
    SOBOTTA, H.; NEUMANN, H.; RIEDE, V.; SYRBU, N. N. (Elservier, 1983)
    Infrared reflectivity spectra of tetragonal ZnP2 are measured in the frequency range from 40 to 600 cm-1 for both polarization directions E ⊥ c and E ‖ c. The parameters of 9 E modes and 4 A2 modes are determined by a ...
  • Infrared lattice vibration study of CuIn5S8 
    NEUMANN, H.; SOBOTTA, H.; RIEDE, V.; TEZLEVAN, V. E.; SYRBU, N. N. (WILEY‐VCH Verlag GmbH & Co. KGaA, 1990)
    Infrared reflectivity spectra of the spinel compound CuIn5S8 are measured at room temperature in the wavenumber range from 180 to 4000 cm−1. It is found that the spectra are dominated by two strong modes with frequencies ...
  • Infrared lattice vibrations of PbGa2S4 
    NEUMANN, H.; SOBOTTA, H.; SYRBU, N. N.; GOLOVEI, V. M. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 1994)
    Infrared reflectivity spectra of PbGa2S4 single crystals are measured at room temperature in the wavenumber range from 30 to 4000 cm−1 for the polarization directions E ∥ c and E ∥ b. The frequencies of 13 B1u modes and ...
  • Infrared Lattice Vibrations of TI3AsS4 
    NEUMANN, H.; SOBOTTA, H.; RIEDE, V.; KAMBA, S.; SYRBU, N. N.; GOLOVEI, M. I. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 1992)
    Infrared reflectivity spectra of TI3AsS4 single crystals are measured at room temperature in the wavenumber range from 30 to 4000 cm−1 for the polarization directions E‖ c and E ‖ a. An analysis of the spectra with the ...
  • Infrared Lattice Vibrations of TlAsS2 
    SOBOTTA, H.; NEUMANN, H.; DREILING, R.; SYRBU, N. N. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 1992)
    The ternary compound TIAsS2 belongs to the family of TI-V-VI2 semiconductors with V= As, Sb, Bi and VI=S, Se, Te that have been investigated rather extensively with regard to their phase diagrams, electronic band structure, ...
  • Substrate-dependent wetting layer formation during GaN growth: Impact on the morphology of the films 
    SIDORENKO, A.; PEISERT, H.; NEUMANN, H.; CHASSÉ, T. (American Institute of Physics, 2007)
    We have compared epitaxial growth of GaN films on 6H-SiC(0001)-(√3×√3) R30°−Ga and on (0001)-sapphire. Predeposited Ga layers were nitrided by ion beam assisted molecular beam epitaxy. Whereas on SiC the initially deposited ...
  • Vibrational properties of CdGa2S4 
    NEUMANN, H.; SOBOTTA, H.; RIEDE, V.; SYRBU, N. N.; RADAUTSAN, S. I. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 1984)
    Polarization-dependent infrared reflectivity spectra of CdGa2S4 are measured at 300 K in the wavenumber range from 180 to 500 cm−1. The analysis of the spectra yields three E and four B modes in this frequency range. The ...

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